ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Iaroslav Gennadievich Tetenkin"

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of Kotel’nikov IRE of the Russian Academy of Sciences; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Iaroslav Gennadievich Tetenkin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring their thermal characteristics. [e-mail: ufire@mv.ru]I. Tetenkin

An Algorithm for Determining the Thermal Parameters of Digital Integrated Circuits for Transient Thermal Characteristics 000_14.pdf

A brief analysis of linear thermal models of semiconductor devices (SD) and algorithms for determining the parameters of the thermal equivalent circuit for transient thermal characteristics (TTC) have been described. The complexity of the implementation of the algorithm for determining the thermal parameters of the SD using the method of structural functions according to the JESD51-14 standard has been mentioned. The original method of measurement of the digital integrated circuits (DIC) TTC using the frequency variation measurement of the DIC ring generator is described. The possibility of implementing of the method using the improved measurement system for the analysis of the DIC thermal parameters is shown. The simple algorithm of calculation of the SD thermal parameters using the zero points of the TTC second derivative is offered. This algorithm for calculating the DIC thermal parameters was tested with the use of CD4011 TTC, which was measured with an improved measurement system. The possibility of the algorithm automation is discussed.

Semiconductor devices, thermal equivalent schemes, thermal parameters, transitional thermal characteristics, digital integrated circuits, measurement, algorithm of calculation.

2016_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of Kotel’nikov IRE; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. e-mail: sva@ulstu.ru. [e-mail: sva@ulstu.ru]V. Sergeev,

Iaroslav Gennadievich Tetenkin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor device and integrated circuit and measuring their thermal characteristics. [e-mail: ufire@mv.ru]I. Tetenkin

Determination of Digital Integrated Circuits Thermal Parameters With the Use of Temperature Dependence of Signal Delay Time 000_12.pdf

This article examines the well-known methods for measuring thermal parameters of digital integrated circuits (DIC). The opportunity to use DIC signal delay time as a temperature-sensitive parameter (TSP) in the process of measuring DIC thermal parameters is also proposed. It allows to overcome some of the current complexities and disadvantages of the well-known methods of measuring DIC thermal parameters with the use of DIC electrical parameters as TSP and to simplify the measurement process automation. The method of measuring DIC thermal parameters on the basis of measuring the frequency of the ring oscillator that consists of DIC inverters in the process of DIC self-heating with electric power consumed is considered in the article. The estimation of measurement accuracy of CMOS DIC thermal resistance component using the current method is also demonstrated. The automated software-hardware complex for researching CMOS DIC indicial thermal parameters that can significantly improve the accuracy of thermal parameters resolution capability is described.

Digital integrated circuits, thermal parameters, measurement, signal delay time, ring oscillator, oscillator frequency, temperature dependence.

2015_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


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