ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Ilya Vladimirovich Frolov"

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Basic Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of monographs, papers, and inventions in the field of modelling and researching semiconductor devices and integrated circuits parameters and measure of its thermal parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Viacheslavovich Vasin, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Physics and Mathematics; graduated from Physics and Technology Faculty оf the Ulyanovsk Branch of Moscow State University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Associate Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fibre optics, methods of inspection of semiconductors and semiconductor devices. [e-mail: s.vasin@outlook.com]S. Vasin,

Oleg Aleksandrovich Radaev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Junior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices parameters. [e-mail: oleg.radaev.91@mail.ru]O. Radaev,

Ilia Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering; graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of methods and means of nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

Automated Installation of Diagnostics of Quality of Light-emitting Heterostructures By the Method of Dynamic Photoelectric Response 000_12.pdf

The block diagram and the principle of action of the automated installation for diagnostics of lateral uniformity of light-emitting heterostructures with quantum walls by measurement and the analysis of a photoelectric response (photovoltage or a photocurrent) are considered at their local dynamic photoexcitation the narrow-band optical radiation of a visible band. The possibility of the choice of harmonic or pulse modulation of counting rate of a flare with adjustment of parameters of modulation is provided in the installation. The electronic-mechanical and optical systems of positioning operated by the microcontroller provide a flare of the heterostructures with quantum walls local area with a minimum diameter of spot of 30 microns and accuracy of positioning ±10 microns. The data acquisition module LA-N1USB transforms a photoresponse signal to a digital signal and transfers it to the computer for processing. Results of approbation of a method and installation on InGaN/GaN light-emitting diodes in the static mode confirm existence of inhomogeneities in distribution of a photoelectric on a light-emitting diode crystal surface. The developed method and installation can be used for diagnostics of quality of both light-emitting heterostructures with quantum walls, and other classes of semiconductor devices with p-n transitions: transistors, solar elements, photo diodes, etc.

Light-emitting heterostructures, quality diagnostics, automated installation, lateral heterogeneity, local photoexcitement, photoelectric response.

2017_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Ilia Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, andidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of methods and means of nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov,

Oleg Aleksandrovich Radaev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of semiconductor devices automated measurement tools. [e-mail: oleg.radaev.91@mail.ru]O. Radaev,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of the modeling and researching semiconductor devices and integrated circuits parameters. [e-mail: sva@ulstu.ru]V. Sergeev

Automation of Measurement Processes of Semiconductor Devices Electrical Characteristics With the Use of Psoc 000_13.pdf

The possibilities and features of automation of measurement processes of the semiconductor devices electrical characteristics with the use of a programmable system-on-chip psoc 4 produced by cypress are considered. The authors discuss the general requirements to the hardware of modern measurers of semiconductor devices characteristics. The block diagram of the automated measurer of capacitance-voltage characteristics of semiconductor diodes implementing the frequency method of capacitance measurement is presented. The measuring block performs the functions of data exchange with the computer, setting block for the mode of the controlled object, measuring oscillation frequency of Lc oscillator and measurement information processing. The block is implemented on a programmable system-on-chip psoc 4 produced by cypress.

Measurement automation, semiconductor device, capacitance-voltage characteristics, programmable system-on chip.

2016_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Vyacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics at Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles in the field of the modeling and research of semiconductor devices and integrated circuits parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Ilya Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering at Ulyanovsk State Technical University; Scientific Associate at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles in the field of methods and means of the nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

The Algorithm for the Frequency-dependent Thermal Impedance Parameter Identification of Thermal Circuits of the Semiconductor Devices 38_6.pdf

The limit functionality and reliability of semiconductor devices (SD) are determined by the active region temperature of the device structures when the SD is operating as a part of electronic equipment. For practical applications, this temperature is calculated in accordance with the principle of thermoelectric analogy based on the equivalent thermal circuit which is presented as an electric circuit of several series-connected RC-elements, each of which corresponds to a specific layer of the SD-structure. The effectiveness of the SD-assembly quality control and the reject of devices with heat sink defects depend on the accuracy of determining the parameters of their equivalent thermal circuit. A brief analysis of the known methods for identifying and determining the parameters of the SD equivalent thermal circuit over the transient thermal characteristics is presented. A more accurate algorithm for the identification and the calculation of the parameters of equivalent thermal circuits in the form of SD multilink RC circuit for the frequency dependence of the modulus and the phase of the thermal impedance is proposed. The algorithm approbation is performed in terms of the identification and the calculation of the parameters of the thermal model of a low-power hetero junction LED of the Vishay production TLCR5800 type. The possibilities of automation of the proposed algorithm in terms of mass control are considered.

Semiconductor device, equivalent thermal circuit, thermal impedance, thermal parameters, identification, algorithm, led.

2014_ 4

Sections: Mathematical modeling

Subjects: Mathematical modeling, Electrical engineering and electronics.


Viacheslav Andreevich Sergeevsergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor or Engineering, Associate Professor, graduated from the Faculty of Physics at the Gorkov State University; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of modeling and research of characteristics of semiconductor devices and integrated circuits [e-mail: sva@ulstu.ru]V. Sergeev,

Ilya Vladimirovich Frolov, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, a research officer of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; graduated from the Faculty of Radio-Engineering at Ulyanovsk State Technical University; an author of articles in the field of methods and facilities of the nondestructive testing of semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

An Algorithm to Determine a Set of Optimal Frequencies for the Test Signal When Measuring Parameters of Multielement Two-terminals 35_4.pdf

An algorithm for determining the optimal test signal frequency set, minimizing the sum of methodical errors indirect measurement of parameters of multi-element two-terminal by impedance spectroscopy method is proposed. The essence of the algorithm is repeated computer simulation of the measurement of the impedance modulus and phase of the two-pole considering additive random errors and calculation errors in determining the parameters of the two- terminal to the relevant functional dependencies on a given set of frequencies. The accuracy of the algorithm is confirmed by the example of the two-element two-terminal in the form of a parallel RC-circuit. It is shown that the results of computer simulations practically coincide with the results of the analytical calculation. An example of determining the optimal test signal frequency set when measuring the three-element two-terminal with a structure similar to small-signal equivalent circuit of a semiconductor diode. As optimization criterion adopted condition of minimum sum of relative errors in the determination of all parameters of multielement two-terminal, but the proposed algorithm works with the other criteria.

Multielement two-terminal, parameters, measurement, impedance spectroscopy, error, algorithm, optimal frequencies.

2014_ 1

Sections: Mathematical modeling

Subjects: Mathematical modeling, Electrical engineering and electronics.


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