ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Vitalii Ivanovich Smirnov"

Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctorof Sciencein Engineering, Professor; graduatedfrom Lobachevsky State University of Nizhny Novgorod with the specialty in Physics; Professor of the Department of Design and Technology of Electronic Instrumentation at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of measurement instrument automation. [e-mail: smirnov-vi@mail.ru]V. Smirnov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Science in Engineering, Professor; graduated from the Faculty of Physics of Lobachevsky State University of Nizhny Novgorod; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Basic Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of monographs, papers, and inventions in the field of the modeling and researching semiconductor devices and integrated circuits parameters and the measurements of its thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Andrei Anatolievich Gavrikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Science in Engineering; graduated from Ulyanovsk State Technical University with the specialty in Design and Technology of Electronic Instrumentation; Senior Staff Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov

Apparatus for Measurement of Thermal Impedance of Solar Batteries 54_14.pdf

This paper describes apparatus for measuring the thermal impedance of solar batteries. A modulation method that uses the harmonic heating power modulation is a base of the apparatus operation. This method allows to determine the thermal resistance components corresponding to the structural elements of a solar battery. To solve the problem, the post processing method for thermal impedance dependence on modulation frequency was developed.Apparatus provides a measurement range of thermal resistance from 0.01 to 100 K/W, the measurement error is 5%, the range of heating currents is from 0.25 up to 4 A, the range of heating power modulation frequency is 0.01 up to 1000 Hz.Research of thermal physical processes in solar batteries performed by the apparatus shows that thermal resistance dependence on heating current is non-linear. This is explained by the non-uniform current distribution through the junction due to the presence of positive thermal feedback.

Thermal resistance, thermal impedance, modulation method, solar battery, current localization.

2018_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Information systems.


Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctor of Engineering, Professor; graduated from Gorky State University with the specialty in Physics; Professor of the Department of Design and Technology of Electronic Instrumentation at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of measurement instrument automation. [e-mail: smirnov-vi@ulstu.ru]V. Smirnov,

Iurii Aleksandrovich Savostin, JSC “ICC Milandr”, graduated from the Moscow Institute of Electronic Technology with the specialty in Automation and Electronics; Head of Research Laboratory at JSC “ICC Milandr”; an author of publications in the field of measuring semiconductor integrated circuit parameters. [e-mail: savostin.u@ic-design.ru]I. Savostin,

Andrei Anatolievich Gavrikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering; graduated from Ulyanovsk State Technical University with the specialty in Design and Technology of Electronic Instrumentation; Senior Staff Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measuring thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov,

Anton Mikhailovich Shorin, Ulyanovsk State Technical University, from Ulyanovsk State Technical University with the specialty in Design and Technology of Electronic Instrumentation; Postgraduate Student at the Department of Design and Technology of Electronic Instrumentation, an author of publications in the field of measuring thermal and physical parameters of semiconductor devices. [e-mail: anshant@yandex.ru]A. Shorin

Methods and Means for Measuring the Thermal Resistance of Integrated Circuits 51_10.pdf

The article deals with methods and means for measuring the thermal resistance of integrated circuits. The standard measuring methods and a modulation method using heating power varying harmonically are compared. The operation principles of thermal resistance meter based on the modulation method, its software and functionality are described. The results of thermal resistance measurements obtained according to the Industry Standard OST 11 0944-96 (method of constant die temperature) and with the use of modulation method are represented. The results of both methods were demonstrated to go with each other within the standard method accuracy. It is indicated that the ability to measure not only the total resistance ”junction-to-case” but also individual thermal resistance components, e.g. the “junction-chip carrier” components, is a merit of the modulation method. This could be used when testing the quality during mounting the die into the case.

Thermal impedance, integrated circuit, modulation of heating power, thermal resistance components.

2018_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctor of Engineering, Professor; graduated from Gorky State University with the specialty of Physics; Professor of the Department of Design and Technology of Electronic Instrumentation at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of automation instrument measurement. [e-mail: smirnov-vi@mail.ru]V. Smirnov,

Andrei Anatolievich Gavrikov, Ulyanovsk State Technical University, Candidate of Engineering; graduated from Ulyanovsk State Technical University with the specialty of Design and Technology of Electronic Instrumentation, Senior Staff Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov,

Anton Mikhailovich Shorin, Ulyanovsk State Technical University, Postgraduate Student at the Department of Design and Technology of Electronic Instrumentation; graduated from Ulyanovsk State Technical University with the specialty of Design and Technology of Electronic Instrumentation; an engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of articles in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: anshant@yandex.ru]A. Shorin

The Method for Measuring Thermal Resistance Components of Semiconductor Devices and Its Practical Implementation 000_13.pdf

The modulation method for measuring components of thermal impedance of semiconductor devices is considered. The method implies device stimulation with heating power varying harmonically. In interpulse time, the heat-sensitive parameter, forward voltage drop on the p-n junction, at low measuring current is determined. First harmonic of the p-n junction temperature is determined by the discrete Fourier transform, which allows to determine thermal impedance module and a phase at modulation frequency of heating power. Numerical simulation shows that the components of thermal resistance of a device according to the Foster network can be determined at the modulation frequencies corresponding to the minima of the first derivative of the frequency dependence of the real part of thermal impedance. A distinctive feature of the method is the fact that the temperature trend of the case does not significantly affect the result of the measurement. The main characteristics of the device realizing the described method are given.

Thermal impedance, semiconductor devices, modulation of heating power, thermal resistance components.

2017_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctor of Engineering, Professor, graduated from the Gorky State University with the specialty of Physics; Professor of the ‘Design and Technology of Electronic Instrumentation’ Department at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of measurement instrument automation. [e-mail: smirnov-vi@mail.ru]V. Smirnov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor, graduated from the Gorky State University with the specialty of Solid-State Electronics, Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles, monographs and inventions in the field of physics of the thermal processes in solid-state structures and semiconductor devices. [e-mail: ]V. Sergeev,

Andrey Anatolyevich Gavrikov, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering, graduated from the Ulyanovsk State Technical University with the specialty of Design and Technology of Electronic Instrumentation, Senior Staff Scientist at Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov

Spectral Method of Measurement of the Led Thermal Resistance and Estimation of the Optimal Performance 36_5.pdf

The computer simulation helped the authors in studying the kinetics of the LED heating by the pulse-width modulated power varying harmonically. The programming model relies on a principle of the thermoelectric analogy saying that the heat dissipation processes on the path “chip - substrate - case - radiator - environment” are similar to electrical processes in the equivalent circuit, which is a set of serial-connected RC-chains. The task of simulation was to validate the LED thermal resistance measurement method based on heating by PWM power, as well as to study the effect on the accuracy and sensitivity of the method parameters such as heating pulse repetition period, frequency, and modulation coefficient, the number of heating pulses per modulation period. The simulation results shows that the method has an accuracy of 3%, and this value is independent of the heating pulse repetition period ranging between 80-200 ms. Sensitivity of the method depends on the modulation frequency of the heating power and heating pulse repetition period. It decreases with increasing modulation frequency, increases with the decrease of the repetition period at constant amplitude of oscillation pulse duration.

Led, thermal resistance, heating process, computer simulation.

2014_ 2

Sections: Mathematical modeling

Subjects: Mathematical modeling, Electrical engineering and electronics.


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