ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Alexey Sergeevich Kadochkin"

Viktor Vladimirovich Prikhodko, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Mathematics of the Ulyanovsk Branch of Lomonosov Moscow State University; Senior Staff Scientist at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include solid state physics, optics, telecommunications. [e-mail: vvp@ulsu.ru]V. Prikhodko,

Sergei Gennadievich Novikov, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Engineering; graduated from the Faculty of Physics and Mathematics of the Ulyanovsk Branch of Lomonosov Moscow State University; Head of the Solid State Electronics Laboratory at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include microelectronics, negatronics, optoelectronics, semiconductor devices with positive feedback. [e-mail: novikovsg@ulsu.ru]S. Novikov,

Aleksandr Sergeevich Alekseev, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Postgraduate Student of Ulyanovsk State University; graduated from the Faculty of High Technology Physics and Engineering of Ulyanovsk State University; Research Assistant at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include semiconductor devices, optoelectronics and microelectronics. [e-mail: granik@ya.ru]A. Alekseev,

Aleksei Valentinovich Berintsev, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Engineer of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include optoelectronics, microelectronics, semiconductor devices; an author of articles and inventions in the field of measurement automation and optoelectronic devices research. [e-mail: berints@mail.ru]A. Berintsev,

Aleksei Sergeevich Kadochkin, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; Senior Staff Scientist of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include optics, plasmonics. [e-mail: askadochkin@sv.ulsu.ru]A. Kadochkin,

Viacheslav Viktorovich Svetukhin, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Doctor of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of the Ulyanovsk Branch of Lomonosov Moscow State University; Professor, Leading Staff Scientist of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include defect formation in semiconductor devices, radiation physics and technology; an author of articles in the field of semiconductor physics and physical material science. [e-mail: slava@sv.uven.ru]V. Svetukhin,

Andrei Ilich Somov, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of the Ulyanovsk Branch of Lomonosov Moscow State University; Senior Staff Scientist of the Solid- State Electronics Laboratory at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include semiconductor devices, optoelectronics, probabilistic processes. [e-mail: andrey_ somov@mail.ru]A. Somov

A System of Monitoring the Individual Absorbed Doses of Ionizing Radiation Based on a Gafchromic EBT3 Radiochrome Film 54_12.pdf

A system for monitoring the absorbed dose of ionizing radiation containing a personal dosimeter of the absorbed dose and a reader (system of readers) is proposed. The sensor material of the dosimeter is a Gafchromic EBT3 photochromic film, sensitive to both X-ray and gamma radiation. An original detector design containing an LED, two photodetectors located in one plane, and an optical flux divider with a mirror coating is proposed. Above one of the photoreceivers, a sensory element is placed, the change in optical transparency of which carries information about the absorbed dose. To transmit data on the measured dose, the radio channel and RFID technology are used. As readers of the data on the accumulated dose, mobile, desktop and stationary RFID readers can be used, including those integrated into enterprise information systems. The sensor used in the personal dosimeter makes it possible to measure the absorbed dose continuously for a long period of time. In addition, the dosimeter does not contain a power source, and the energy necessary for operation comes at the moments of interaction of the personal dosimeter with the reader, which ensures a reduction in the mass-dimensions and the possibility of implementing the dosimeter in a compact form factor.The results of model calculations and experimental studies carried out to justify the possibility of constructing a detector based on the Gafchromic EBT3 radiochromic film are presented.

Gafchromic ebt3, rfid, monitoring system, personal dosimetry, dosimeter of absorbed dose, radiochromic films, gafchromic ebt3, radio frequency identification, rfid, x-ray radiation, gamma radiation, numerical modeling, optical spectroscopy.

2018_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Information systems.


Viacheslav Viktorovich Svetukhin, Ulyanovsk State University, Doctor of Physics and Mathematics, graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; Director of the Research Technological Institute at Ulyanovsk State University; author of articles in the field of semiconductor physics, physical material science. [e-mail: slava@sv.uven.ru]V. Svetukhin,

Alexey Sergeevich Kadochkin, Ulyanovsk State University, Candidate of Physics and Mathematics, graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; Associate Professor at the Chair 'Radiophysics and Electronics' of Ulyanovsk State University; author of articles in the field of physical material science, optics, radiative study of materials. [e-mail: askadochkin@sv.ulsu.ru]A. Kadochkin,

Vladimir Dmitrievich Risovany, JSC 'State Scientific Center Research Institute of Atomic Reactors' in Dimitrovgrad, Doctor of Engineering, graduated from the Metallurgical Faculty of Ural Polytechnic Institute; Deputy Director General at JSC 'State Scientific Center Research Institute of Atomic Reactors' in Dimitrovgrad; author of articles and monographs in the field of reactor material science and creation of new absorbing materials and control systems for nuclear reactors of enhanced operation characteristics. [e-mail: ris@niiar.ru]V. Risovany,

Natalia Sergeevna Krestina, Ulyanovsk State University, Graduated from the Faculty of Physics and Mathematics of Ulyanovsk State Pedagogic University; post-graduate student in the profession 'Physics of Condensed State of Substance'; author of articles in the field of physical material science. [e-mail: krestinan@ulsu.ru]N. Krestina

A Mathematical Model and a Software Suite to Calculate Helium Release From Irradiated Boron Carbide Powder Under the Shell of Absorbing Rods in Vver 26_2.pdf

The paper suggests a mathematical model to calculate the pressure of helium released from irradiated boron carbide powder under the shell of absorbing rod in VVER. A software suite to simulate the behavior of helium in absorbing rod in a designed LOCA-type failure has been created.

Vver, absorbing rod, boron carbide, loca-type failure.

2011_ 4

Sections: Mathematical modeling, calculus of approximations and software systems

Subjects: Information systems.


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