ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Sergei Viacheslavovich Vasin"

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Basic Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of monographs, papers, and inventions in the field of modelling and researching semiconductor devices and integrated circuits parameters and measure of its thermal parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Viacheslavovich Vasin, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Physics and Mathematics; graduated from Physics and Technology Faculty оf the Ulyanovsk Branch of Moscow State University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Associate Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fibre optics, methods of inspection of semiconductors and semiconductor devices. [e-mail: s.vasin@outlook.com]S. Vasin,

Oleg Aleksandrovich Radaev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Junior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices parameters. [e-mail: oleg.radaev.91@mail.ru]O. Radaev,

Ilia Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering; graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of methods and means of nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

Automated Installation of Diagnostics of Quality of Light-emitting Heterostructures By the Method of Dynamic Photoelectric Response 000_12.pdf

The block diagram and the principle of action of the automated installation for diagnostics of lateral uniformity of light-emitting heterostructures with quantum walls by measurement and the analysis of a photoelectric response (photovoltage or a photocurrent) are considered at their local dynamic photoexcitation the narrow-band optical radiation of a visible band. The possibility of the choice of harmonic or pulse modulation of counting rate of a flare with adjustment of parameters of modulation is provided in the installation. The electronic-mechanical and optical systems of positioning operated by the microcontroller provide a flare of the heterostructures with quantum walls local area with a minimum diameter of spot of 30 microns and accuracy of positioning ±10 microns. The data acquisition module LA-N1USB transforms a photoresponse signal to a digital signal and transfers it to the computer for processing. Results of approbation of a method and installation on InGaN/GaN light-emitting diodes in the static mode confirm existence of inhomogeneities in distribution of a photoelectric on a light-emitting diode crystal surface. The developed method and installation can be used for diagnostics of quality of both light-emitting heterostructures with quantum walls, and other classes of semiconductor devices with p-n transitions: transistors, solar elements, photo diodes, etc.

Light-emitting heterostructures, quality diagnostics, automated installation, lateral heterogeneity, local photoexcitement, photoelectric response.

2017_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Sergei Viacheslavovich Vasin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences (RAS), Candidate of Physics and Mathematics; graduated from Physics and Technology Faculty оf Ulyanovsk branch of Moscow State University; Senior Scientist at Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences (RAS); Associate Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fiber optics, methods of inspection of semiconductors and semiconductor devices. [e-mail: s.vasin@outlook.com]S. Vasin,

Oleg Vitalevich Ivanov, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics and at Technological Research Institute of Ulyanovsk State University, Doctor of Physics and Mathematics; graduated from Physics and Technology Faculty оf Ulyanovsk branch of Moscow State University; Scientist at Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics and at Technological Research Institute of Ulyanovsk State University; Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fiber optics, optics of anisotropic media and thin films. [e-mail: olegivvit@yandex.ru]O. Ivanov

Development of a Control and Interrogation Scheme of a Fiber-optic Bend Sensor Based on Double Cladding Fiber 000_14.pdf

The control and interrogation scheme of the fiber optic bend sensor was developed and implemented. The structure of the sensor is formed by inserting a section of SM630 fiber with double cladding between standard SMF-28 single-mode fibers. The operating principle of the sensor is based on conversion between core and cladding modes. The modes are coupled at the junction of the fibers with different refractive index profiles. Two laser diodes with the wavelengths of 1328 and 1545 nm are used for sensor interrogation. At these two wavelengths, the dependences of fiber transmittance on bending are significantly different. A microcontroller is used to control and collection data from a photodetector. The article shows that the proposed and implemented scheme allows the sensor to measure bends with curvature radii from meters to 26 cm with a measurement error less than 1%.

Optical fiber, cladding modes, fiber optic bend sensor.

2017_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


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