ISSN 1991-2927
 

ACP № 3 (61) 2020

Author: "Ruslan Gennadevich Tarasov"

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Viacheslav Andreevich Sergeev, Doctor of Sciences in Engineering, Professor; graduated from the Faculty of Physics of the Lobachevsky State University of Gorky; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Head of the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an invention holder and author of monographs, articles in the field of the performance analysis and thermal parameter measurement of semiconductor devices and integrated circuits. e-mail: sva@ulstu.ruV. A. Sergeev

Ruslan Gennadevich Tarasov, graduated from the Ulyanovsk Higher Military Command School of Communications; Director of JSC ‘NPP ‘Zavod Iskra’; an applicant at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of publications in the field of development of methods and instruments for parameter measurements and quality control of radioelectronic devices. e-mail: rgtarasov@yandex.ruR. G. Tarasov

Quality control of x-band output power amplifier submodules by transient thermal characteristics60_14.pdf

A brief rview of techniques and facilities for detecting hidden defects in electronic modules by thermal diagnostic and measuring methods for characterizing the thermal properties of active devices in electronic modules is presented. It is shown that the assembly quality of modern submodules of X-band output power amplifiers (OPA) with two parallel- connected GaAs monolithic microwave intеgrated circuits can be assessed by the temperature difference of these monolitic integrated circuits during the OPA operation. A Foster-type thermal equivalent circuit with two galvanic-coupled active devices (unpacked semiconductor devices) is examined in order to describe and analyse thermal processes in OPA. A new method for measuring the thermal junction-to-case resistance and thermal junction-to-case time constant of semiconductor devices by transient thermal characteristics at the start of heating process when applying heat power of two different levels to the electronic module is described. The method is distinguished and favoured among others, due to the fact that it is not required to measure power consumed by each semiconductor device; only the total power consumed by the electronic module from the power supply is specified when measuring. The error of this estimation method does not exceed 10 percent. Сonditions and features of the method applied to the OPA submodules are considered.

Submodule of output power amplifier, active devices, electronic module, semiconductor devices, heat power, thermal parameters, measurement, transient thermal characteristics.

2020_ 2

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Science in Engineering, Professor; graduated from the Faculty of Physics of Gorky State University; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of monographs, papers in the field of the modeling and researching semiconductor devices and integrated circuits parameters and measure of its thermal parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Ruslan Gennadievich Tarasov, Research-and-Production Association ‘NPP ‘Zavod Iskra’ JSC, graduated from the Ulyanovsk High Military Engineering School of Communications; Director of Research-and-Production Association ‘NPP ‘Zavod Iskra’ JSC; Postgraduate Student at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of papers in the field of development of analytical quality control methods and automated measurement tools of semiconductor devices. [e-mail: rgtarasov@mail.ru]R. Tarasov,

Aleksandr Aleksandrovich Kulikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of papers in the field of development of semiconductor devices automated measurement tools. [e-mail: ufire@mv.ru]A. Kulikov

The Quality Diagnostics of Output Power Amplifiers of the Apaa Transceiver Modules By Temperature Fields 55_14.pdf

A structural diagram of Transmit/Receive modules (TRM) of Active Phased Array Antennas X-band is briefly reviewed and it is shown that the quality of TRM is largely determined by the build quality of the most critical node - submodules of output power amplifiers (OPA) with two parallel-connected monolithic integrated circuits (MIC) microwave amplifiers. The structure and the operation of the measuring stand for monitoring the main electrical and energy parameters of the OPA, as well as the temperature fields of printed circuit boards of the OPA submodules using an OptoTherm infrared (IR) microscope are given. Selective distributions of the OPA submodules by energy parameters showed that the quality of the OPA is determined to a large extent by the quality of the microwave paths and the build quality. When examining the temperature fields of printed circuit boards of OPA submodules using an IR microscope, which did not pass the output power control, when using OPA in nominal and more severely dissipated power modes, it was established that up to 75% of assembly defects and passive circuits of OPA submodules appear in local overheating of submodule elements. In particular, a strong (with a coefficient of ~ 0.8) negative correlation is observed between the output power level and the overheating temperature of the balanced resistor in the output power adder. A detailed analysis of the causes of local overheating of OPA elements showed that up to 40% of the detected defects can be eliminated by adjusting the installation. The remaining 60% of defects of the OPA submodules are probably determined by the quality of the elements themselves.

Apaa transceiver modules, submodules of output power amplifiers, measuring stand, output power, temperature fields, diagnostics, defects.

2019_ 1

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.



Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, [e-mail: sva@ulstu.ru]V. Sergeev,

Aleksandr Aleksandrovich Kulikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: ufire@mv.ru]A. Kulikov,

Ruslan Gennadevich Tarasov, JSC “NPP “Zavod Iskra”, graduated from Ulyanovsk High Military Engineering School; Director of JSC “NPP “Zavod Iskra”, Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: rgtarasov@mail.ru]R. Tarasov,

Iaroslav Gennadevich Tetenkin, Ulyanovsk Instrument Manufacturing Design Bureau, Candidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer of Ulyanovsk Instrument Manufacturing Design Bureau; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring of their thermal characteristics. [e-mail: a732041@yandex.ru]I. Tetenkin

Installation for Measurement of Current Pinching Voltage in Structures of Power Rf and Microwave Bipolar Transistors 000_13.pdf

The short review of the known ways and tools of current pinching voltage in structures of power RF and microwave bipolar and heterobipolar transistors (PBT) in the active mode of inclusion is submitted. The article shows that the ways based on measurement of the steepness of dependence U EB ) of voltage on emitter junction from collector voltage are ( U CB effective for the devices working in the quasicontinuous mode. Installation for measuring voltage of a current pinching in PBT which principle of work is based on measurement of amplitude of a variable component Ũ EB of voltage on emitter junction of PBT at transmission of direct emitter current via the transistor and giving on the collector of the sum of linearly increasing small alternating voltage is described. The current pinching in transistor structure is occurred in sharp increase of the steepness of dependence Ũ E B ). The algorithm of indirect determination of tension of current localization in ( U CB transistor structure on the measured values on the initial site of the specified dependences without hit of the controlled PBT in the mode of "a hot spot" is described.

Power rf and microwave bipolar transistors, electrothermal instability, current pinching voltage, installation, measurement.

2017_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics, Mathematical modeling.


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