ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Iaroslav Gennadevich Tetenkin"

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, [e-mail: sva@ulstu.ru]V. Sergeev,

Aleksandr Aleksandrovich Kulikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: ufire@mv.ru]A. Kulikov,

Ruslan Gennadevich Tarasov, JSC “NPP “Zavod Iskra”, graduated from Ulyanovsk High Military Engineering School; Director of JSC “NPP “Zavod Iskra”, Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: rgtarasov@mail.ru]R. Tarasov,

Iaroslav Gennadevich Tetenkin, Ulyanovsk Instrument Manufacturing Design Bureau, Candidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer of Ulyanovsk Instrument Manufacturing Design Bureau; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring of their thermal characteristics. [e-mail: a732041@yandex.ru]I. Tetenkin

Installation for Measurement of Current Pinching Voltage in Structures of Power Rf and Microwave Bipolar Transistors 000_13.pdf

The short review of the known ways and tools of current pinching voltage in structures of power RF and microwave bipolar and heterobipolar transistors (PBT) in the active mode of inclusion is submitted. The article shows that the ways based on measurement of the steepness of dependence U EB ) of voltage on emitter junction from collector voltage are ( U CB effective for the devices working in the quasicontinuous mode. Installation for measuring voltage of a current pinching in PBT which principle of work is based on measurement of amplitude of a variable component Ũ EB of voltage on emitter junction of PBT at transmission of direct emitter current via the transistor and giving on the collector of the sum of linearly increasing small alternating voltage is described. The current pinching in transistor structure is occurred in sharp increase of the steepness of dependence Ũ E B ). The algorithm of indirect determination of tension of current localization in ( U CB transistor structure on the measured values on the initial site of the specified dependences without hit of the controlled PBT in the mode of "a hot spot" is described.

Power rf and microwave bipolar transistors, electrothermal instability, current pinching voltage, installation, measurement.

2017_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics, Mathematical modeling.


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