ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Viacheslav Andreevich Sergeev"

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Science in Engineering, Professor; graduated from the Faculty of Physics of Gorky State University; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of monographs, papers in the field of the modeling and researching semiconductor devices and integrated circuits parameters and measure of its thermal parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Ruslan Gennadievich Tarasov, Research-and-Production Association ‘NPP ‘Zavod Iskra’ JSC, graduated from the Ulyanovsk High Military Engineering School of Communications; Director of Research-and-Production Association ‘NPP ‘Zavod Iskra’ JSC; Postgraduate Student at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of papers in the field of development of analytical quality control methods and automated measurement tools of semiconductor devices. [e-mail: rgtarasov@mail.ru]R. Tarasov,

Aleksandr Aleksandrovich Kulikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of papers in the field of development of semiconductor devices automated measurement tools. [e-mail: ufire@mv.ru]A. Kulikov

The Quality Diagnostics of Output Power Amplifiers of the Apaa Transceiver Modules By Temperature Fields 55_14.pdf

A structural diagram of Transmit/Receive modules (TRM) of Active Phased Array Antennas X-band is briefly reviewed and it is shown that the quality of TRM is largely determined by the build quality of the most critical node - submodules of output power amplifiers (OPA) with two parallel-connected monolithic integrated circuits (MIC) microwave amplifiers. The structure and the operation of the measuring stand for monitoring the main electrical and energy parameters of the OPA, as well as the temperature fields of printed circuit boards of the OPA submodules using an OptoTherm infrared (IR) microscope are given. Selective distributions of the OPA submodules by energy parameters showed that the quality of the OPA is determined to a large extent by the quality of the microwave paths and the build quality. When examining the temperature fields of printed circuit boards of OPA submodules using an IR microscope, which did not pass the output power control, when using OPA in nominal and more severely dissipated power modes, it was established that up to 75% of assembly defects and passive circuits of OPA submodules appear in local overheating of submodule elements. In particular, a strong (with a coefficient of ~ 0.8) negative correlation is observed between the output power level and the overheating temperature of the balanced resistor in the output power adder. A detailed analysis of the causes of local overheating of OPA elements showed that up to 40% of the detected defects can be eliminated by adjusting the installation. The remaining 60% of defects of the OPA submodules are probably determined by the quality of the elements themselves.

Apaa transceiver modules, submodules of output power amplifiers, measuring stand, output power, temperature fields, diagnostics, defects.

2019_ 1

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.



Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctorof Sciencein Engineering, Professor; graduatedfrom Lobachevsky State University of Nizhny Novgorod with the specialty in Physics; Professor of the Department of Design and Technology of Electronic Instrumentation at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of measurement instrument automation. [e-mail: smirnov-vi@mail.ru]V. Smirnov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Science in Engineering, Professor; graduated from the Faculty of Physics of Lobachevsky State University of Nizhny Novgorod; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Basic Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of monographs, papers, and inventions in the field of the modeling and researching semiconductor devices and integrated circuits parameters and the measurements of its thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Andrei Anatolievich Gavrikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Science in Engineering; graduated from Ulyanovsk State Technical University with the specialty in Design and Technology of Electronic Instrumentation; Senior Staff Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov

Apparatus for Measurement of Thermal Impedance of Solar Batteries 54_14.pdf

This paper describes apparatus for measuring the thermal impedance of solar batteries. A modulation method that uses the harmonic heating power modulation is a base of the apparatus operation. This method allows to determine the thermal resistance components corresponding to the structural elements of a solar battery. To solve the problem, the post processing method for thermal impedance dependence on modulation frequency was developed.Apparatus provides a measurement range of thermal resistance from 0.01 to 100 K/W, the measurement error is 5%, the range of heating currents is from 0.25 up to 4 A, the range of heating power modulation frequency is 0.01 up to 1000 Hz.Research of thermal physical processes in solar batteries performed by the apparatus shows that thermal resistance dependence on heating current is non-linear. This is explained by the non-uniform current distribution through the junction due to the presence of positive thermal feedback.

Thermal resistance, thermal impedance, modulation method, solar battery, current localization.

2018_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Information systems.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of sciences (RAS); Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE; an author of monographs, articles, and inventions in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Evgenevich Rezchikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Postgraduate Student of the Base Department of Radioengineering, Opto and Nanolectronics at the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of articles in the field of measurement automation and noise characteristics research of semiconductor devices and integrated circuits. [e-mail: s.rezchikov@ulstu.ru]S. Rezchikov

The Optimization of Procedures for Measuring the Semiconducter Devices’ Paramters of Low-freqency Noise Influenced By White Noise 52_8.pdf

The brief analysis of techniques for measuring the parameters of low-frequency (LF) noise with 1/f?-type spectrum has been proposed. The estimation of measurement error of power spectral density (PSD) and ?-rays spectrum index are given by taking into account the influence of white-noise level. Based on the results of noise spectral power density measurements implemented at three frequencies when series and parallel filtering, authors propose procedures of measuring the index of ?-rays spectrum that minimize a total inaccuracy of ? value determination. The essence of optimization in case of serial filtering reduces to the optimum distribution of preset overall measurement time between measurements at the first, second and additional frequencies in case of the given frequency ratio, and when parallel filtering, to the determination of the optimum frequency ratio of measuring the noise PSD in case of the preset overall measurement time. A systematic measurement error of ? value has been estimated while implementing of various measurement procedures depending on ? value. The estimations are presented in the article. It is shown that the optimization of measuring procedures allows to reduce an error of the ? value determination by 1.5 to 2 times.

Low-frequency noise, power spectral density, index of spectrum form, measurement, error, optimum procedures.

2018_ 2

Sections: Mathematical modeling

Subjects: Mathematical modeling.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, [e-mail: sva@ulstu.ru]V. Sergeev,

Aleksandr Aleksandrovich Kulikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: ufire@mv.ru]A. Kulikov,

Ruslan Gennadevich Tarasov, JSC “NPP “Zavod Iskra”, graduated from Ulyanovsk High Military Engineering School; Director of JSC “NPP “Zavod Iskra”, Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: rgtarasov@mail.ru]R. Tarasov,

Iaroslav Gennadevich Tetenkin, Ulyanovsk Instrument Manufacturing Design Bureau, Candidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer of Ulyanovsk Instrument Manufacturing Design Bureau; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring of their thermal characteristics. [e-mail: a732041@yandex.ru]I. Tetenkin

Installation for Measurement of Current Pinching Voltage in Structures of Power Rf and Microwave Bipolar Transistors 000_13.pdf

The short review of the known ways and tools of current pinching voltage in structures of power RF and microwave bipolar and heterobipolar transistors (PBT) in the active mode of inclusion is submitted. The article shows that the ways based on measurement of the steepness of dependence U EB ) of voltage on emitter junction from collector voltage are ( U CB effective for the devices working in the quasicontinuous mode. Installation for measuring voltage of a current pinching in PBT which principle of work is based on measurement of amplitude of a variable component Ũ EB of voltage on emitter junction of PBT at transmission of direct emitter current via the transistor and giving on the collector of the sum of linearly increasing small alternating voltage is described. The current pinching in transistor structure is occurred in sharp increase of the steepness of dependence Ũ E B ). The algorithm of indirect determination of tension of current localization in ( U CB transistor structure on the measured values on the initial site of the specified dependences without hit of the controlled PBT in the mode of "a hot spot" is described.

Power rf and microwave bipolar transistors, electrothermal instability, current pinching voltage, installation, measurement.

2017_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics, Mathematical modeling.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Basic Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of monographs, papers, and inventions in the field of modelling and researching semiconductor devices and integrated circuits parameters and measure of its thermal parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Viacheslavovich Vasin, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Physics and Mathematics; graduated from Physics and Technology Faculty оf the Ulyanovsk Branch of Moscow State University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Associate Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fibre optics, methods of inspection of semiconductors and semiconductor devices. [e-mail: s.vasin@outlook.com]S. Vasin,

Oleg Aleksandrovich Radaev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Junior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices parameters. [e-mail: oleg.radaev.91@mail.ru]O. Radaev,

Ilia Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering; graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of methods and means of nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

Automated Installation of Diagnostics of Quality of Light-emitting Heterostructures By the Method of Dynamic Photoelectric Response 000_12.pdf

The block diagram and the principle of action of the automated installation for diagnostics of lateral uniformity of light-emitting heterostructures with quantum walls by measurement and the analysis of a photoelectric response (photovoltage or a photocurrent) are considered at their local dynamic photoexcitation the narrow-band optical radiation of a visible band. The possibility of the choice of harmonic or pulse modulation of counting rate of a flare with adjustment of parameters of modulation is provided in the installation. The electronic-mechanical and optical systems of positioning operated by the microcontroller provide a flare of the heterostructures with quantum walls local area with a minimum diameter of spot of 30 microns and accuracy of positioning ±10 microns. The data acquisition module LA-N1USB transforms a photoresponse signal to a digital signal and transfers it to the computer for processing. Results of approbation of a method and installation on InGaN/GaN light-emitting diodes in the static mode confirm existence of inhomogeneities in distribution of a photoelectric on a light-emitting diode crystal surface. The developed method and installation can be used for diagnostics of quality of both light-emitting heterostructures with quantum walls, and other classes of semiconductor devices with p-n transitions: transistors, solar elements, photo diodes, etc.

Light-emitting heterostructures, quality diagnostics, automated installation, lateral heterogeneity, local photoexcitement, photoelectric response.

2017_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov IRE of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences (RAS); Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE of RAS; an author of monographs, articles, and inventions in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Evgenevich Rezchikov , Ulyanovsk State Technical University, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Postgraduate Student at the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE of RAS; an author of papers in the field of measurement automation and researching noise characteristics of semiconductor devices and integrated circuits. [e-mail: s.rezchikov@ulstu.ru]S. Rezchikov

Optimization of the Procedures of Measuring the Parameters of Low-frequence Noise With 1/f Γ-type Spectrum 000_13.pdf

The short analysis of measurement methods for parameters of low-frequency (LF) noise with 1/fγ-type is considered. The authors show that the total measurement error of the LF-noise power spectral density (PSD) at the specified time of averaging is minimum at a certain (optimum) bandwidth of the filter. Measurement procedures for an exponent γ of PSD frequency dependence minimizing a total measurement error γ by results of measurement of PSD noise at two frequencies at series and parallel filtration are offered. The optimization essence at a series filtration comes down to optimum distribution of the specified total time of measurement at the specified relation of frequencies between measurements at the first and second frequency, and at a parallel filtration -to definition of the optimum relation of frequencies for PSD noise measurement at the specified total time of measurement. Methodical measurement error estimates for γare given at implementation of various measurement procedures depending on the γvalue.

Low-frequency noise, power spectral density, parameters, measurement, error, optimum procedures.

2016_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.


Ilia Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, andidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of methods and means of nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov,

Oleg Aleksandrovich Radaev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of semiconductor devices automated measurement tools. [e-mail: oleg.radaev.91@mail.ru]O. Radaev,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of the modeling and researching semiconductor devices and integrated circuits parameters. [e-mail: sva@ulstu.ru]V. Sergeev

Automation of Measurement Processes of Semiconductor Devices Electrical Characteristics With the Use of Psoc 000_13.pdf

The possibilities and features of automation of measurement processes of the semiconductor devices electrical characteristics with the use of a programmable system-on-chip psoc 4 produced by cypress are considered. The authors discuss the general requirements to the hardware of modern measurers of semiconductor devices characteristics. The block diagram of the automated measurer of capacitance-voltage characteristics of semiconductor diodes implementing the frequency method of capacitance measurement is presented. The measuring block performs the functions of data exchange with the computer, setting block for the mode of the controlled object, measuring oscillation frequency of Lc oscillator and measurement information processing. The block is implemented on a programmable system-on-chip psoc 4 produced by cypress.

Measurement automation, semiconductor device, capacitance-voltage characteristics, programmable system-on chip.

2016_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of Kotel’nikov IRE of the Russian Academy of Sciences; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Iaroslav Gennadievich Tetenkin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring their thermal characteristics. [e-mail: ufire@mv.ru]I. Tetenkin

An Algorithm for Determining the Thermal Parameters of Digital Integrated Circuits for Transient Thermal Characteristics 000_14.pdf

A brief analysis of linear thermal models of semiconductor devices (SD) and algorithms for determining the parameters of the thermal equivalent circuit for transient thermal characteristics (TTC) have been described. The complexity of the implementation of the algorithm for determining the thermal parameters of the SD using the method of structural functions according to the JESD51-14 standard has been mentioned. The original method of measurement of the digital integrated circuits (DIC) TTC using the frequency variation measurement of the DIC ring generator is described. The possibility of implementing of the method using the improved measurement system for the analysis of the DIC thermal parameters is shown. The simple algorithm of calculation of the SD thermal parameters using the zero points of the TTC second derivative is offered. This algorithm for calculating the DIC thermal parameters was tested with the use of CD4011 TTC, which was measured with an improved measurement system. The possibility of the algorithm automation is discussed.

Semiconductor devices, thermal equivalent schemes, thermal parameters, transitional thermal characteristics, digital integrated circuits, measurement, algorithm of calculation.

2016_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Aleksandr Vladimirovich Ulyanov, Department of GSiIT of "ER-Telecom Holding" Ulyanovsk Branch, Head of the Department of GSiIT of "ER-Telecom Holding" Ulyanovsk Branch; graduated from the Faculty of Radioengineering at Ulyanovsk State Technical University; finished his post-graduate study at the Department of Radioengineering at Ulyanovsk State Technical University; an author of articles in the field of methods and tools for measuring the parameters of elements and devices of micro and optoelectronics, automation of measurement processes. [e-mail: ulyanov_a@bk.ru]A. Ulyanov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics at Lobachevsky State University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS. monographs; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Viktor Nikolaevich Rogov, Ulyanovsk State Technical University, Candidate of Engineering, Professor, Head of the Faculty of RadioEngineering of Ulyanovsk State Technical University; graduated from Ulyanovsk Polytechnic Institute; an author of articles and inventions in the field of parameters measurement of electrical noise, optical signals, colorimetry. [e-mail: rvn@ulstu.ru]V. Rogov

Methods and Means of Operational Control of Narrow-band Optical Radiation Spectrum Parameters 000_14.pdf

A brief analysis of the well-known means of operational control parameters of optical radiation spectrum as well as the application of these means has been submitted. It is shown that the main trend of development of spectral analysis means is to improve their performance. A method for measuring the parameters of a narrow-band spectrum of optical radiation in two photodetectors with predetermined spectral characteristics described by a Gaussian function with different wavelengths at the maximum bandwidth has been described. The possibility of operational determination of both the central wavelength of the emission spectrum and the spectral width with the use of the proposed method has been shown. The proposed method can improve performance of monitoring and control sources of optical radiation. The functional scheme and the main characteristics of the experimental prototype device based on the proposed method have been shown. It is experimentally demonstrated that the possibility of application of the developed embodiment of the device for determining the thermal properties of LEDs based on the emission spectrum shift as a result of self-heating of the LED operating current. The results of the testing methodology for measuring thermal properties of LEDs with the use of several samples of serial devices have been obtained.

Emission spectrum, parameters, measurement, photodetector.

2015_ 4

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of Kotel’nikov IRE; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. e-mail: sva@ulstu.ru. [e-mail: sva@ulstu.ru]V. Sergeev,

Iaroslav Gennadievich Tetenkin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor device and integrated circuit and measuring their thermal characteristics. [e-mail: ufire@mv.ru]I. Tetenkin

Determination of Digital Integrated Circuits Thermal Parameters With the Use of Temperature Dependence of Signal Delay Time 000_12.pdf

This article examines the well-known methods for measuring thermal parameters of digital integrated circuits (DIC). The opportunity to use DIC signal delay time as a temperature-sensitive parameter (TSP) in the process of measuring DIC thermal parameters is also proposed. It allows to overcome some of the current complexities and disadvantages of the well-known methods of measuring DIC thermal parameters with the use of DIC electrical parameters as TSP and to simplify the measurement process automation. The method of measuring DIC thermal parameters on the basis of measuring the frequency of the ring oscillator that consists of DIC inverters in the process of DIC self-heating with electric power consumed is considered in the article. The estimation of measurement accuracy of CMOS DIC thermal resistance component using the current method is also demonstrated. The automated software-hardware complex for researching CMOS DIC indicial thermal parameters that can significantly improve the accuracy of thermal parameters resolution capability is described.

Digital integrated circuits, thermal parameters, measurement, signal delay time, ring oscillator, oscillator frequency, temperature dependence.

2015_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics at Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of monographs, articles, and inventions in the field of the modeling, research and thermal conditions measuring of semiconductor devices and integrated circuits parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Aleksei Valentinovich Berintsev, S.P.Kapitsa Techological Institute of Ulyanovsk State Technical University, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical Universiry; Specialist at S.P.Kapitsa Techological Institute of Ulyanovsk State Technical University; an author of articles and inventions in the field of computer-aided measurement and optoelectronic devices research. [e-mail: ilya-frolov88@mail.ru]A. Berintsev

Error Estimation of Thermal Conditions of Measurement Trancdusers With Differential Connection of Sensors 39_13.pdf

The main sources of errors of transducers with sensors differential connections caused by the distinction of thermal conditions of the sensing elements work are considered. Expressions for the distinction of sensors temperature in static and dynamic modes of operation caused by both the distinction of sensors parameters heat and the power dissipated by sensors are obtained. It is shown that instant at grading of the converter with various thermal time constants of sensors the thermal nature error reaches a maximum at a particular instant depending on the relation of thermal time constants. The thermal nature error can also significantly exceed the error in steady conditions.Errors of the differential photodiode are estimated on the basis of obtained expressions, and it is shown that the error of thermal conditions has multiplicative character and depends on the sizes of a light spot. For converters of bridge type the zero temperature drift is proportional to a difference of sensing devices thermal resistance. The more the total thermal resistance of sensors is the more, the more the size of temperature imbalance is.

Differential transducer, sensors, thermal conditions, temperature difference, errors of thermal conditions.

2015_ 1

Sections: Computer-aided engineering

Subjects: Computer-aided engineering, Electrical engineering and electronics.


Vyacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics at Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles in the field of the modeling and research of semiconductor devices and integrated circuits parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Ilya Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering at Ulyanovsk State Technical University; Scientific Associate at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles in the field of methods and means of the nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

The Algorithm for the Frequency-dependent Thermal Impedance Parameter Identification of Thermal Circuits of the Semiconductor Devices 38_6.pdf

The limit functionality and reliability of semiconductor devices (SD) are determined by the active region temperature of the device structures when the SD is operating as a part of electronic equipment. For practical applications, this temperature is calculated in accordance with the principle of thermoelectric analogy based on the equivalent thermal circuit which is presented as an electric circuit of several series-connected RC-elements, each of which corresponds to a specific layer of the SD-structure. The effectiveness of the SD-assembly quality control and the reject of devices with heat sink defects depend on the accuracy of determining the parameters of their equivalent thermal circuit. A brief analysis of the known methods for identifying and determining the parameters of the SD equivalent thermal circuit over the transient thermal characteristics is presented. A more accurate algorithm for the identification and the calculation of the parameters of equivalent thermal circuits in the form of SD multilink RC circuit for the frequency dependence of the modulus and the phase of the thermal impedance is proposed. The algorithm approbation is performed in terms of the identification and the calculation of the parameters of the thermal model of a low-power hetero junction LED of the Vishay production TLCR5800 type. The possibilities of automation of the proposed algorithm in terms of mass control are considered.

Semiconductor device, equivalent thermal circuit, thermal impedance, thermal parameters, identification, algorithm, led.

2014_ 4

Sections: Mathematical modeling

Subjects: Mathematical modeling, Electrical engineering and electronics.


Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctor of Engineering, Professor, graduated from the Gorky State University with the specialty of Physics; Professor of the ‘Design and Technology of Electronic Instrumentation’ Department at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of measurement instrument automation. [e-mail: smirnov-vi@mail.ru]V. Smirnov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor, graduated from the Gorky State University with the specialty of Solid-State Electronics, Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles, monographs and inventions in the field of physics of the thermal processes in solid-state structures and semiconductor devices. [e-mail: ]V. Sergeev,

Andrey Anatolyevich Gavrikov, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering, graduated from the Ulyanovsk State Technical University with the specialty of Design and Technology of Electronic Instrumentation, Senior Staff Scientist at Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov

Spectral Method of Measurement of the Led Thermal Resistance and Estimation of the Optimal Performance 36_5.pdf

The computer simulation helped the authors in studying the kinetics of the LED heating by the pulse-width modulated power varying harmonically. The programming model relies on a principle of the thermoelectric analogy saying that the heat dissipation processes on the path “chip - substrate - case - radiator - environment” are similar to electrical processes in the equivalent circuit, which is a set of serial-connected RC-chains. The task of simulation was to validate the LED thermal resistance measurement method based on heating by PWM power, as well as to study the effect on the accuracy and sensitivity of the method parameters such as heating pulse repetition period, frequency, and modulation coefficient, the number of heating pulses per modulation period. The simulation results shows that the method has an accuracy of 3%, and this value is independent of the heating pulse repetition period ranging between 80-200 ms. Sensitivity of the method depends on the modulation frequency of the heating power and heating pulse repetition period. It decreases with increasing modulation frequency, increases with the decrease of the repetition period at constant amplitude of oscillation pulse duration.

Led, thermal resistance, heating process, computer simulation.

2014_ 2

Sections: Mathematical modeling

Subjects: Mathematical modeling, Electrical engineering and electronics.


Viacheslav Andreevich Sergeevsergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor or Engineering, Associate Professor, graduated from the Faculty of Physics at the Gorkov State University; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of modeling and research of characteristics of semiconductor devices and integrated circuits [e-mail: sva@ulstu.ru]V. Sergeev,

Ilya Vladimirovich Frolov, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, a research officer of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; graduated from the Faculty of Radio-Engineering at Ulyanovsk State Technical University; an author of articles in the field of methods and facilities of the nondestructive testing of semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

An Algorithm to Determine a Set of Optimal Frequencies for the Test Signal When Measuring Parameters of Multielement Two-terminals 35_4.pdf

An algorithm for determining the optimal test signal frequency set, minimizing the sum of methodical errors indirect measurement of parameters of multi-element two-terminal by impedance spectroscopy method is proposed. The essence of the algorithm is repeated computer simulation of the measurement of the impedance modulus and phase of the two-pole considering additive random errors and calculation errors in determining the parameters of the two- terminal to the relevant functional dependencies on a given set of frequencies. The accuracy of the algorithm is confirmed by the example of the two-element two-terminal in the form of a parallel RC-circuit. It is shown that the results of computer simulations practically coincide with the results of the analytical calculation. An example of determining the optimal test signal frequency set when measuring the three-element two-terminal with a structure similar to small-signal equivalent circuit of a semiconductor diode. As optimization criterion adopted condition of minimum sum of relative errors in the determination of all parameters of multielement two-terminal, but the proposed algorithm works with the other criteria.

Multielement two-terminal, parameters, measurement, impedance spectroscopy, error, algorithm, optimal frequencies.

2014_ 1

Sections: Mathematical modeling

Subjects: Mathematical modeling, Electrical engineering and electronics.


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