ISSN 1991-2927
 

ACP № 2 (56) 2019

Author: "Aleksei Valentinovich Berintsev"

Viktor Vladimirovich Prikhodko, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Mathematics of the Ulyanovsk Branch of Lomonosov Moscow State University; Senior Staff Scientist at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include solid state physics, optics, telecommunications. [e-mail: vvp@ulsu.ru]V. Prikhodko,

Sergei Gennadievich Novikov, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Engineering; graduated from the Faculty of Physics and Mathematics of the Ulyanovsk Branch of Lomonosov Moscow State University; Head of the Solid State Electronics Laboratory at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include microelectronics, negatronics, optoelectronics, semiconductor devices with positive feedback. [e-mail: novikovsg@ulsu.ru]S. Novikov,

Aleksandr Sergeevich Alekseev, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Postgraduate Student of Ulyanovsk State University; graduated from the Faculty of High Technology Physics and Engineering of Ulyanovsk State University; Research Assistant at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include semiconductor devices, optoelectronics and microelectronics. [e-mail: granik@ya.ru]A. Alekseev,

Aleksei Valentinovich Berintsev, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Engineer of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include optoelectronics, microelectronics, semiconductor devices; an author of articles and inventions in the field of measurement automation and optoelectronic devices research. [e-mail: berints@mail.ru]A. Berintsev,

Aleksei Sergeevich Kadochkin, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; Senior Staff Scientist of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include optics, plasmonics. [e-mail: askadochkin@sv.ulsu.ru]A. Kadochkin,

Viacheslav Viktorovich Svetukhin, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Doctor of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of the Ulyanovsk Branch of Lomonosov Moscow State University; Professor, Leading Staff Scientist of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include defect formation in semiconductor devices, radiation physics and technology; an author of articles in the field of semiconductor physics and physical material science. [e-mail: slava@sv.uven.ru]V. Svetukhin,

Andrei Ilich Somov, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of the Ulyanovsk Branch of Lomonosov Moscow State University; Senior Staff Scientist of the Solid- State Electronics Laboratory at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include semiconductor devices, optoelectronics, probabilistic processes. [e-mail: andrey_ somov@mail.ru]A. Somov

A System of Monitoring the Individual Absorbed Doses of Ionizing Radiation Based on a Gafchromic EBT3 Radiochrome Film 54_12.pdf

A system for monitoring the absorbed dose of ionizing radiation containing a personal dosimeter of the absorbed dose and a reader (system of readers) is proposed. The sensor material of the dosimeter is a Gafchromic EBT3 photochromic film, sensitive to both X-ray and gamma radiation. An original detector design containing an LED, two photodetectors located in one plane, and an optical flux divider with a mirror coating is proposed. Above one of the photoreceivers, a sensory element is placed, the change in optical transparency of which carries information about the absorbed dose. To transmit data on the measured dose, the radio channel and RFID technology are used. As readers of the data on the accumulated dose, mobile, desktop and stationary RFID readers can be used, including those integrated into enterprise information systems. The sensor used in the personal dosimeter makes it possible to measure the absorbed dose continuously for a long period of time. In addition, the dosimeter does not contain a power source, and the energy necessary for operation comes at the moments of interaction of the personal dosimeter with the reader, which ensures a reduction in the mass-dimensions and the possibility of implementing the dosimeter in a compact form factor.The results of model calculations and experimental studies carried out to justify the possibility of constructing a detector based on the Gafchromic EBT3 radiochromic film are presented.

Gafchromic ebt3, rfid, monitoring system, personal dosimetry, dosimeter of absorbed dose, radiochromic films, gafchromic ebt3, radio frequency identification, rfid, x-ray radiation, gamma radiation, numerical modeling, optical spectroscopy.

2018_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Information systems.


Aleksei Viktorovich Tregubov, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Chief Engineer at Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; an author of articles in the field of computer simulation and fiber sensors. [e-mail: tregub@ulsu.ru]A. Tregubov,

Sergei Gennadievich Novikov, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Chief of Solid State Electronics Laboratory at Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; graduated from the Faculty of Physics and Engineering of Ulyanovsk Affiliate of Lomonosov Moscow State University; interested in microelectronics, negatronics, optoelectronics, semiconductor devices with positive feedback. [e-mail: novikovsg@ulsu.ru]S. Novikov,

Viacheslav Viktorovich Svetukhin, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Doctor of Physics and Mathematics; Professor; graduated from the Faculty of Physics and Engineering of Ulyanovsk Affiliate of Lomonosov Moscow State University; Senior Scientist at Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; interested in defect formation in semiconductor devices, radiation physics and technology; an author of semiconductor physics and physical material science. [e-mail: slava@sv.uven.ru]V. Svetukhin,

Aleksandr Sergeevich Alekseev, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Postgraduate Student of Ulyanovsk State University; graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; Research Assistant at Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; interested in semiconductor devices, optoelectronics and microelectronics. [e-mail: granik@ya.ru]A. Alekseev,

Aleksei Valentinovich Berintsev, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Candidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Engineer at Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; interested in optoelectronics, microelectronics, semiconductor devices; an author of articles and inventions in the field of measurement automation and optoelectronic devices research. [e-mail: berints@mail.ru]A. Berintsev,

Viktor Vladimirovich Prikhodko, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Candidate of Physics and Mathematics, graduated from the Faculty of Physics and Mathematics of Ulyanovsk Affiliate of Lomonosov Moscow State University; Head of Information Technology and Telecommunications Department, Senior Researcher at Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; interested in solid state physics, optics, telecommunications. [e-mail: vvp@ulsu.ru]V. Prikhodko,

Aleksandr Nikolaevich Fomin, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Candidate of Engineering; graduated from the Faculty of Physics and Mathematics at Ulyanovsk State Pedagogical University named after I.N. Ulyanov; Director of Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; interested in radiotechnologies. [e-mail: mr.fominan@yandex.ru]A. Fomin,

Artem Borisovich Muralev, Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University, Junior Scientist at Scientific Research Technological Institute named after S.P. Kapitsa of Ulyanovsk State University; graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; interested in computer simulation, radiation physics and technology. [e-mail: a.b.muralev@yandex.ru]A. Muralev,

Dmitrii Vladimirovich Markov, Joint Stock Company “Institute of Nuclear Materials”, Candidate of Engineering; graduated from the Faculty of Physics and Engineering at the Ural State Technical University; Director of Joint Stock Company “Institute of Nuclear Materials”; interested in reactor material science. [e-mail: irm@irmatom.ru]D. Markov

System for Monitoring the State of Spent Nuclear Fuel Dry Storage Facility 000_8.pdf

A hardware and software system for monitoring the state of a spent nuclear fuel dry storage facility (SFSF) has been designed by the team of authors to obtain data on the spatial distribution of temperature and dose fields in the storage facility. The software part of the system allows for the mathematical modeling of SFSF space taking into account the activities of the fuel assemblies and the absorbing properties of materials. The hardware part of the system is based on optic fiber sensors and used in verification the results of computer simulation, control of the boundary conditions and check of the quality of the mathematical model. The main feature of the system developed is the use of a distributive fiber temperature sensor based on Brillouin scattering and fiber sensors of radiation intensity based on scintillators and wavelength shifting fibers. All sensing elements of sensors have high radiation hardness and are made with the use of specific fibers. The system developed is a stable and fault-tolerant complex that does not require regular maintenance.

Fiber optic sensors, dosimeter, temperature, monitoring system.

2017_ 2

Sections: Information systems

Subjects: Information systems.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics at Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of monographs, articles, and inventions in the field of the modeling, research and thermal conditions measuring of semiconductor devices and integrated circuits parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Aleksei Valentinovich Berintsev, S.P.Kapitsa Techological Institute of Ulyanovsk State Technical University, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical Universiry; Specialist at S.P.Kapitsa Techological Institute of Ulyanovsk State Technical University; an author of articles and inventions in the field of computer-aided measurement and optoelectronic devices research. [e-mail: ilya-frolov88@mail.ru]A. Berintsev

Error Estimation of Thermal Conditions of Measurement Trancdusers With Differential Connection of Sensors 39_13.pdf

The main sources of errors of transducers with sensors differential connections caused by the distinction of thermal conditions of the sensing elements work are considered. Expressions for the distinction of sensors temperature in static and dynamic modes of operation caused by both the distinction of sensors parameters heat and the power dissipated by sensors are obtained. It is shown that instant at grading of the converter with various thermal time constants of sensors the thermal nature error reaches a maximum at a particular instant depending on the relation of thermal time constants. The thermal nature error can also significantly exceed the error in steady conditions.Errors of the differential photodiode are estimated on the basis of obtained expressions, and it is shown that the error of thermal conditions has multiplicative character and depends on the sizes of a light spot. For converters of bridge type the zero temperature drift is proportional to a difference of sensing devices thermal resistance. The more the total thermal resistance of sensors is the more, the more the size of temperature imbalance is.

Differential transducer, sensors, thermal conditions, temperature difference, errors of thermal conditions.

2015_ 1

Sections: Computer-aided engineering

Subjects: Computer-aided engineering, Electrical engineering and electronics.


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