ISSN 1991-2927
 

ACP № 2 (56) 2019

Section: "ELECTRICAL ENGINEERING AND ELECTRONICS"

Denis Aleksandrovich Evsevichev, Ulyanovsk Civil Aviation Institute n. a. Marshal of the Air Force B.P. Bugaev, Candidate of Science in Engineering; graduated from the Radioengineering Faculty of Ulyanovsk State Technical University; Associate Professor of the Department of Air Traffic Control and Navigation of the Ulyanovsk Civil Aviation Institute n. a. Marshal of the Air Force B.P. Bugaev; an author of articles in the field of computer-aided design and optoelectronics. [e-mail: denistk_87@mail.ru]D. Evsevichev,

Mikhail Konstantinovich Samokhvalov, Ulyanovsk State Technical University, Doctor of Sciences in Physics and Mathematics, Professor; graduated from the Faculty of Physics of Saratov State University; Professor at the Department of Design and Technology of Electronic Devices of Ulyanovsk State Technical University; an author of articles in the field of optoelectronics.[e-mail: sam@ulstu.ru]M. Samokhvalov

Automated Selection of Designs for Thin-Film Electroluminescent Displays for Avionics 56_13.pdf

The development of methods and means for testing the applicability of thin-film electroluminescent indicator devices as displays for displaying navigation and technical information in aircraft is carried out. Thin-film electroluminescent displays are used in equipment and systems that require high image quality and reliability as well as a long service life of the devices. The result of the performed work is the ExpAT program, which allows to carry out a computational experiment to test of the applicability of the TFEL indicator devices in aeronautical engineering. The algorithm of the program includes iterative calculations of the indicator parameters at user-defined intervals, comparing them with the specified ones and recording the results. As a result of the computational experiment, variants of structures of thin-film emitting structures that meet the operating conditions of indicators in avionics are shown.

Aircraft engineering, electroluminescence, indicator, simulation experiment.

2019_ 2

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.



Tatiana Ivanovna Davydova, Federal Research-and-Production Center Joint Stock Company ‘Research-and-Production Association ‘Mars’, Candidate of Science in Engineering; graduated from the Radioengineering Faculty of Ulyanovsk State Technical University; Leading Engineer at FRPC JSC ‘RPA ‘Mars’; an author of articles and a monograph in the field of reliability calculations and operating of radio engineering facilities. [e-mail: tasha_dav@inbox.ru]T. Davydova,

Andrei Vladimirovich Kalashnikov, Federal Research-and-Production Center Joint Stock Company ‘Research-and-Production Association ‘Mars’, graduated from the Faculty of Design and Technology of Electronic Devices of UlSTU; a research engineer at FRPC JSC ‘RPA ‘Mars’; specializes in the field of development of printed circuit boards with electronic components for secondary power supply systems. [e-mail: mars@mv.ru]A. Kalashnikov

A Coefficient Method for Calculating the Reliability of Functional Part of Power Supply Pcb 56_14.pdf

The reliability of electronic equipment has been the focus of the attention for many decades. The actuality of that grows along with the miniaturization of electronic components and the density of attachment in electronic equipment. The process of reliability calculation becomes more complex and takes more time in view of the growth of type and amount of applied electronic components. Nonfailure operating probability, failure intensity, and mean time to failure are basic qualitative characteristics of the reliability. The dangerous failures of electronic components can have critical and catastrophic consequences in the functionality of electronic equipment. The article deals with the procedure of the reliability calculation using various coefficients. Different mathematical models can be used for the same task of the reliability calculation. In order to solve the tasks, various methods can be used. All these facts may cause different results.Authors represent an approach to the coefficient method allowing to carry out the reliability calculation with higher precision and fidelity. The coefficient method is usable for comparing different ways for reliability calculation.

Reliability, coefficient method, time to failures.

2019_ 2

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.



Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Science in Engineering, Professor; graduated from the Faculty of Physics of Gorky State University; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of monographs, papers in the field of the modeling and researching semiconductor devices and integrated circuits parameters and measure of its thermal parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Ruslan Gennadievich Tarasov, Research-and-Production Association ‘NPP ‘Zavod Iskra’ JSC, graduated from the Ulyanovsk High Military Engineering School of Communications; Director of Research-and-Production Association ‘NPP ‘Zavod Iskra’ JSC; Postgraduate Student at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of papers in the field of development of analytical quality control methods and automated measurement tools of semiconductor devices. [e-mail: rgtarasov@mail.ru]R. Tarasov,

Aleksandr Aleksandrovich Kulikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of papers in the field of development of semiconductor devices automated measurement tools. [e-mail: ufire@mv.ru]A. Kulikov

The Quality Diagnostics of Output Power Amplifiers of the Apaa Transceiver Modules By Temperature Fields 55_14.pdf

A structural diagram of Transmit/Receive modules (TRM) of Active Phased Array Antennas X-band is briefly reviewed and it is shown that the quality of TRM is largely determined by the build quality of the most critical node - submodules of output power amplifiers (OPA) with two parallel-connected monolithic integrated circuits (MIC) microwave amplifiers. The structure and the operation of the measuring stand for monitoring the main electrical and energy parameters of the OPA, as well as the temperature fields of printed circuit boards of the OPA submodules using an OptoTherm infrared (IR) microscope are given. Selective distributions of the OPA submodules by energy parameters showed that the quality of the OPA is determined to a large extent by the quality of the microwave paths and the build quality. When examining the temperature fields of printed circuit boards of OPA submodules using an IR microscope, which did not pass the output power control, when using OPA in nominal and more severely dissipated power modes, it was established that up to 75% of assembly defects and passive circuits of OPA submodules appear in local overheating of submodule elements. In particular, a strong (with a coefficient of ~ 0.8) negative correlation is observed between the output power level and the overheating temperature of the balanced resistor in the output power adder. A detailed analysis of the causes of local overheating of OPA elements showed that up to 40% of the detected defects can be eliminated by adjusting the installation. The remaining 60% of defects of the OPA submodules are probably determined by the quality of the elements themselves.

Apaa transceiver modules, submodules of output power amplifiers, measuring stand, output power, temperature fields, diagnostics, defects.

2019_ 1

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.



Viktor Vladimirovich Prikhodko, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Mathematics of the Ulyanovsk Branch of Lomonosov Moscow State University; Senior Staff Scientist at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include solid state physics, optics, telecommunications. [e-mail: vvp@ulsu.ru]V. Prikhodko,

Sergei Gennadievich Novikov, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Engineering; graduated from the Faculty of Physics and Mathematics of the Ulyanovsk Branch of Lomonosov Moscow State University; Head of the Solid State Electronics Laboratory at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include microelectronics, negatronics, optoelectronics, semiconductor devices with positive feedback. [e-mail: novikovsg@ulsu.ru]S. Novikov,

Aleksandr Sergeevich Alekseev, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Postgraduate Student of Ulyanovsk State University; graduated from the Faculty of High Technology Physics and Engineering of Ulyanovsk State University; Research Assistant at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include semiconductor devices, optoelectronics and microelectronics. [e-mail: granik@ya.ru]A. Alekseev,

Aleksei Valentinovich Berintsev, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Engineer of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include optoelectronics, microelectronics, semiconductor devices; an author of articles and inventions in the field of measurement automation and optoelectronic devices research. [e-mail: berints@mail.ru]A. Berintsev,

Aleksei Sergeevich Kadochkin, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of Ulyanovsk State University; Senior Staff Scientist of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include optics, plasmonics. [e-mail: askadochkin@sv.ulsu.ru]A. Kadochkin,

Viacheslav Viktorovich Svetukhin, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Doctor of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of the Ulyanovsk Branch of Lomonosov Moscow State University; Professor, Leading Staff Scientist of the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include defect formation in semiconductor devices, radiation physics and technology; an author of articles in the field of semiconductor physics and physical material science. [e-mail: slava@sv.uven.ru]V. Svetukhin,

Andrei Ilich Somov, the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University, Candidate of Science in Physics and Mathematics; graduated from the Faculty of Physics and Engineering of the Ulyanovsk Branch of Lomonosov Moscow State University; Senior Staff Scientist of the Solid- State Electronics Laboratory at the S.P. Kapitsa Research Institute of Technology at Ulyanovsk State University; his research interests include semiconductor devices, optoelectronics, probabilistic processes. [e-mail: andrey_ somov@mail.ru]A. Somov

A System of Monitoring the Individual Absorbed Doses of Ionizing Radiation Based on a Gafchromic EBT3 Radiochrome Film 54_12.pdf

A system for monitoring the absorbed dose of ionizing radiation containing a personal dosimeter of the absorbed dose and a reader (system of readers) is proposed. The sensor material of the dosimeter is a Gafchromic EBT3 photochromic film, sensitive to both X-ray and gamma radiation. An original detector design containing an LED, two photodetectors located in one plane, and an optical flux divider with a mirror coating is proposed. Above one of the photoreceivers, a sensory element is placed, the change in optical transparency of which carries information about the absorbed dose. To transmit data on the measured dose, the radio channel and RFID technology are used. As readers of the data on the accumulated dose, mobile, desktop and stationary RFID readers can be used, including those integrated into enterprise information systems. The sensor used in the personal dosimeter makes it possible to measure the absorbed dose continuously for a long period of time. In addition, the dosimeter does not contain a power source, and the energy necessary for operation comes at the moments of interaction of the personal dosimeter with the reader, which ensures a reduction in the mass-dimensions and the possibility of implementing the dosimeter in a compact form factor.The results of model calculations and experimental studies carried out to justify the possibility of constructing a detector based on the Gafchromic EBT3 radiochromic film are presented.

Gafchromic ebt3, rfid, monitoring system, personal dosimetry, dosimeter of absorbed dose, radiochromic films, gafchromic ebt3, radio frequency identification, rfid, x-ray radiation, gamma radiation, numerical modeling, optical spectroscopy.

2018_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Information systems.


Mikhail Konstantinovich Samokhvalov, Ulyanovsk State Technical University, Doctor of Sciences in Physics and Mathematics, Professor; graduated from the Faculty of Physics of Saratov State University; Professor at the Department of Design and Technology of Electronic Devices at Ulyanovsk State Technical University; an author of articles and monographs in the field of optoelectronics. [e-mail: sam@ulstu.ru]M. Samokhvalov

Thermophysical Characteristics of Thin-film Electroluminescent Capacitors 54_13.pdf

Theoretical analysis and experimental studies of the processes of electric power dissipation and heating in thin-film electroluminescent capacitors in operating modes are carried out. The analysis of heat fluxes in a thin-film structure allowed to develop the thermal scheme of the electroluminescent capacitor. The calculation of numerical values of the thermal scheme elements taking into account features of properties of materials and designs of radiators is carried out. Studies have shown that the electrical power generated in the phosphor film in the form of heat is dissipated mainly through the glass substrate. It is established that the thermal resistance of a thin-film electroluminescent capacitor is 300-350 K/W and the thermal constant is 150-200 s. Heating of a thin-film structure does not exceed 10-15 K and cannot lead to degradation of the emitting indicator element.

Thin film electroluminescent capacitor, temperature resistance, phosphor, electroluminescence, indicator.

2018_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.


Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctorof Sciencein Engineering, Professor; graduatedfrom Lobachevsky State University of Nizhny Novgorod with the specialty in Physics; Professor of the Department of Design and Technology of Electronic Instrumentation at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of measurement instrument automation. [e-mail: smirnov-vi@mail.ru]V. Smirnov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Science in Engineering, Professor; graduated from the Faculty of Physics of Lobachevsky State University of Nizhny Novgorod; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Basic Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of monographs, papers, and inventions in the field of the modeling and researching semiconductor devices and integrated circuits parameters and the measurements of its thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Andrei Anatolievich Gavrikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Science in Engineering; graduated from Ulyanovsk State Technical University with the specialty in Design and Technology of Electronic Instrumentation; Senior Staff Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov

Apparatus for Measurement of Thermal Impedance of Solar Batteries 54_14.pdf

This paper describes apparatus for measuring the thermal impedance of solar batteries. A modulation method that uses the harmonic heating power modulation is a base of the apparatus operation. This method allows to determine the thermal resistance components corresponding to the structural elements of a solar battery. To solve the problem, the post processing method for thermal impedance dependence on modulation frequency was developed.Apparatus provides a measurement range of thermal resistance from 0.01 to 100 K/W, the measurement error is 5%, the range of heating currents is from 0.25 up to 4 A, the range of heating power modulation frequency is 0.01 up to 1000 Hz.Research of thermal physical processes in solar batteries performed by the apparatus shows that thermal resistance dependence on heating current is non-linear. This is explained by the non-uniform current distribution through the junction due to the presence of positive thermal feedback.

Thermal resistance, thermal impedance, modulation method, solar battery, current localization.

2018_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Information systems.


Mikhail Konstantinovich Samokhvalov, Ulyanovsk State Technical University, Doctor of Sciences in Physics and Mathematics, Professor; graduated from the Faculty of Physics of Saratov State University named after N.G. Chernyshevsky; Professor of the Department of Electronic Instrumentation Design and Technology at Ulyanovsk State Technical University; an author of articles and monographs in the field of optoelectronics. [e-mail: sam@ulstu.ru]M. Samokhvalov

Modeling the Brightness Dynamics of Thin-film Electroluminescent Capacitors 53_12.pdf

The processes of excitation of luminescence of thin-film electroluminescent capacitors within the model of direct shock excitation of activator centers in the luminophore are analyzed. Mathematical modeling of the dynamics of the brightness of radiation sources is carried out on the basis of the solution of the nonlinear ordinary differential equation describing the kinetics of changes in the density of excited centers of luminescence in the phosphor film. A program for numerical solution of nonlinear equation of luminance dynamics by Runge-Kutt method using a computer is developed. It is shown that the duration of transient processes determined by the brightness waves reaches 8-10 periods of applied alternating voltage. In order to obtain high brightness levels of electroluminescent indicators, it is necessary to excite the indicator elements with suites of alternating voltage pulses, the duration of which must be at least the time of reaching the steady-state operation.

Thin film electroluminescent capacitor, brightness, phosphor, electroluminescence, indicator.

2018_ 3

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Mathematical modeling, Information systems.


Rudolf Aleksandrovich Brazhe, Ulyanovsk State Technical University, Doctor of Sciences in Physics and Mathematics, Professor, Head of the Department of Physics at Ulyanovsk State Technical University; graduated from the Faculty of Physics of Saratov State University named after N.G. Chernyshevsky; an author of numerous scientific papers, monographs, tutorials, and invention certificates; has research interests in the field of wave processes, meta- and nanomaterials, nanoelectronics, and control system elements [e-mail: brazhe@ulstu.ru]R. Brazhe,

Andrei Fedorovich Savin, RITG, LLC, graduated from the Faculty of Physics and Mathematics of Ulyanovsk State Teachers University named after I.N. Ulyanov; Lead Analyzer of RITG, LLC; an author of publications in the field of mathematical modeling of nanoscale radioengineering components. [e-mail: a_f_savin@mail.ru]A. Savin

Electric Characteristics of Sensing Elements of Resonance Nanosensors for Robotic Systems Based on Spiral Nanotubes 53_13.pdf

Sensing devices of nanosensors for robotic and biorobotic systems based on separate spiral nanotubes draw an attention of researchers both as from the point of view of opportunities of their design with the use of the temporary nanotechnologies as from the point of view of their high sensitivity to external influences. Owing to deformation of nanocoil as a result of external influence, its impedance changes, and a shift of a resonant frequency appears. It is shown that the resonant frequency of such nanosolenoids can reach tens petahertz, and its shift can make the tenth shares of petahertz as a result of nanocoil’s length change for 1 percent.

Spiral nanotubes, resonant nanosensors, impedance properties.

2018_ 3

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Mathematical modeling.


Rudolf Aleksandrovich Brazhe, Ulyanovsk State Technical University, Doctor of Sciences in Physics and Mathematics, Professor, Head of the Depart-ment of Physics at Ulyanovsk State Technical University; graduated from the Faculty of Physics of Saratov State University named after N.G. Chernyshevsky; an author of numerous scientific papers, monographs, tutorials, and invention certificates; has research interests in the field of wave processes, meta- and nanomaterials, nanoelectronics, and control system elements. [e-mail: brazhe@ulstu.ru]R. Brazhe

Mechanical Characteristics of Electromechanical Resonators Based on Spiral Nanotubes 53_14.pdf

In electromechanical resonators shaped as spiral nanotubes, two types of resonances such as an electrical resonance like in serial RLC circuit and the mechanical one like in a coil spring can exist. Both types of resonances can be used for designing the sensing devices of resonance nanosensors for robotic and biorobotic systems though their resonant frequencies strongly differ from each other. This paper deals with a comparison of electrical and mechanical characteristics of the electromechanical resonators based on coiled nanotubes. It is shown that the frequency of the displacement resonance in such mechanical oscillators can reach tens of gigahertz while the current resonance occurs at the frequencies reaching tens petahertz. The amplitude-frequency and phase-frequency characteristics of forced oscillations in the considered nanospirals are brought. It is shown that their mechanical figure of merit does not exceed several units and is comparable with the electrical one because of grate attenuation.

Spiral nanotubes, electromechanical resonator, resonance characteristics.

2018_ 3

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Mathematical modeling.


Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctor of Engineering, Professor; graduated from Gorky State University with the specialty in Physics; Professor of the Department of Design and Technology of Electronic Instrumentation at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of measurement instrument automation. [e-mail: smirnov-vi@ulstu.ru]V. Smirnov,

Iurii Aleksandrovich Savostin, JSC “ICC Milandr”, graduated from the Moscow Institute of Electronic Technology with the specialty in Automation and Electronics; Head of Research Laboratory at JSC “ICC Milandr”; an author of publications in the field of measuring semiconductor integrated circuit parameters. [e-mail: savostin.u@ic-design.ru]I. Savostin,

Andrei Anatolievich Gavrikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering; graduated from Ulyanovsk State Technical University with the specialty in Design and Technology of Electronic Instrumentation; Senior Staff Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measuring thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov,

Anton Mikhailovich Shorin, Ulyanovsk State Technical University, from Ulyanovsk State Technical University with the specialty in Design and Technology of Electronic Instrumentation; Postgraduate Student at the Department of Design and Technology of Electronic Instrumentation, an author of publications in the field of measuring thermal and physical parameters of semiconductor devices. [e-mail: anshant@yandex.ru]A. Shorin

Methods and Means for Measuring the Thermal Resistance of Integrated Circuits 51_10.pdf

The article deals with methods and means for measuring the thermal resistance of integrated circuits. The standard measuring methods and a modulation method using heating power varying harmonically are compared. The operation principles of thermal resistance meter based on the modulation method, its software and functionality are described. The results of thermal resistance measurements obtained according to the Industry Standard OST 11 0944-96 (method of constant die temperature) and with the use of modulation method are represented. The results of both methods were demonstrated to go with each other within the standard method accuracy. It is indicated that the ability to measure not only the total resistance ”junction-to-case” but also individual thermal resistance components, e.g. the “junction-chip carrier” components, is a merit of the modulation method. This could be used when testing the quality during mounting the die into the case.

Thermal impedance, integrated circuit, modulation of heating power, thermal resistance components.

2018_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, [e-mail: sva@ulstu.ru]V. Sergeev,

Aleksandr Aleksandrovich Kulikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: ufire@mv.ru]A. Kulikov,

Ruslan Gennadevich Tarasov, JSC “NPP “Zavod Iskra”, graduated from Ulyanovsk High Military Engineering School; Director of JSC “NPP “Zavod Iskra”, Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices. [e-mail: rgtarasov@mail.ru]R. Tarasov,

Iaroslav Gennadevich Tetenkin, Ulyanovsk Instrument Manufacturing Design Bureau, Candidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Engineer of Ulyanovsk Instrument Manufacturing Design Bureau; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring of their thermal characteristics. [e-mail: a732041@yandex.ru]I. Tetenkin

Installation for Measurement of Current Pinching Voltage in Structures of Power Rf and Microwave Bipolar Transistors 000_13.pdf

The short review of the known ways and tools of current pinching voltage in structures of power RF and microwave bipolar and heterobipolar transistors (PBT) in the active mode of inclusion is submitted. The article shows that the ways based on measurement of the steepness of dependence U EB ) of voltage on emitter junction from collector voltage are ( U CB effective for the devices working in the quasicontinuous mode. Installation for measuring voltage of a current pinching in PBT which principle of work is based on measurement of amplitude of a variable component Ũ EB of voltage on emitter junction of PBT at transmission of direct emitter current via the transistor and giving on the collector of the sum of linearly increasing small alternating voltage is described. The current pinching in transistor structure is occurred in sharp increase of the steepness of dependence Ũ E B ). The algorithm of indirect determination of tension of current localization in ( U CB transistor structure on the measured values on the initial site of the specified dependences without hit of the controlled PBT in the mode of "a hot spot" is described.

Power rf and microwave bipolar transistors, electrothermal instability, current pinching voltage, installation, measurement.

2017_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics, Mathematical modeling.


Aleksei Arkadevich Smagin, Ulyanovsk State University, Doctor of Engineering, Professor; graduated from the Faculty of Radioengineering of Ulyanovsk Polytechnic Institute; Head of the Department of Telecommunications Technologies and Networks at Ulyanovsk State University; an author of articles, inventions, and monographs in the field of different-purpose information system development. [e-mail: smaginaa1@mail.ru]A. Smagin,

Andrei Evgenevich Klochkov, Ulyanovsk State University, graduated from the Faculty of Mathematics and Information Technologies of Ulyanovsk State University, Senior Lecturer at the Department of Information Security and Management Theory of Ulyanovsk State University; experienced in of work in the field of information security from leakages through technical communication channels. [e-mail: ak@ulsu.ru]A. Klochkov,

Aleksandr Iurevich Grigorev, Ulyanovsk State University, graduated from the Faculty of Mathematics and Information Technologies of Ulyanovsk State University; Postgraduate Student at the Department of Telecommunication Technologies and Networks of Ulyanovsk State University; Software Engineer at Federal Research-and-Production Center Joint Stock Company ‘Research-and-Production Association 'Mars'; an author of articles in the field of statistical testing of random sequences. [e-mail: als73@mail.ru]A. Grigorev

Researching the Ability of Using Mobile Device Sensors for Generation of Random Sequencies 000_14.pdf

The article considers researches of ability of using digital position monitoring encoders for generation of bit random sequences used in cryptography. In order to create hardware generator, gyroscope and accelerometer sensors installed on three mobile devices are used. The source of randomness is the regular change of sensor data due to movement in space, minor fluctuations and vibrations of a device during operation. The article suggests the methods of position sensor data processing for creating bit sequences. The stages of testing and the criterion for confirmation of randomness are discussed. The NIST STS software package contains different statistical tests that are used for randomness testing of sequences. The article includes the results of the experiments of testing the sensors (accelerometer and gyroscope) of three mobile devices.

Nist sts, accelerometer, gyroscope, random numbers generator, statistical tests, nist sts.

2017_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Aleksei Arkadevich Smagin, Ulyanovsk State University, Doctor of Engineering, Professor; graduated from the Faculty of Radioengineering of Ulyanovsk Polytechnic Institute; Head of the Department of Telecommunications Technologies and Networks at Ulyanovsk State University; an author of articles, inventions, and monographs in the field of different-purpose information system development. [e-mail: smaginaa1@mail.ru]A. Smagin,

Andrei Evgenevich Klochkov, Ulyanovsk State University, graduated from the Faculty of Mathematics and Information Technologies of Ulyanovsk State University, Senior Lecturer at the Department of Information Security and Management Theory of Ulyanovsk State University; experienced in of work in the field of information security from leakages through technical communication channels. [e-mail: ak@ulsu.ru]A. Klochkov,

Aleksandr Iurevich Grigorev, Ulyanovsk State University, graduated from the Faculty of Mathematics and Information Technologies of Ulyanovsk State University; Postgraduate Student at the Department of Telecommunication Technologies and Networks of Ulyanovsk State University; Software Engineer at Federal Research-and-Production Center Joint Stock Company ‘Research-and-Production Association 'Mars'; an author of articles in the field of statistical testing of random sequences. [e-mail: als73@mail.ru]A. Grigorev

Researching the Ability of Using Mobile Device Sensors for Generation of Random Sequencies 000_14.pdf

The article considers researches of ability of using digital position monitoring encoders for generation of bit random sequences used in cryptography. In order to create hardware generator, gyroscope and accelerometer sensors installed on three mobile devices are used. The source of randomness is the regular change of sensor data due to movement in space, minor fluctuations and vibrations of a device during operation. The article suggests the methods of position sensor data processing for creating bit sequences. The stages of testing and the criterion for confirmation of randomness are discussed. The NIST STS software package contains different statistical tests that are used for randomness testing of sequences. The article includes the results of the experiments of testing the sensors (accelerometer and gyroscope) of three mobile devices.

Nist sts, accelerometer, gyroscope, random numbers generator, statistical tests, nist sts.

2017_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics, Mathematical modeling.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Head of the Basic Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of monographs, papers, and inventions in the field of modelling and researching semiconductor devices and integrated circuits parameters and measure of its thermal parameters. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Viacheslavovich Vasin, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Physics and Mathematics; graduated from Physics and Technology Faculty оf the Ulyanovsk Branch of Moscow State University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Associate Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fibre optics, methods of inspection of semiconductors and semiconductor devices. [e-mail: s.vasin@outlook.com]S. Vasin,

Oleg Aleksandrovich Radaev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Junior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of automated measurement tools for semiconductor devices parameters. [e-mail: oleg.radaev.91@mail.ru]O. Radaev,

Ilia Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Candidate of Engineering; graduated from the Faculty of Radioengineering of the Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of methods and means of nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

Automated Installation of Diagnostics of Quality of Light-emitting Heterostructures By the Method of Dynamic Photoelectric Response 000_12.pdf

The block diagram and the principle of action of the automated installation for diagnostics of lateral uniformity of light-emitting heterostructures with quantum walls by measurement and the analysis of a photoelectric response (photovoltage or a photocurrent) are considered at their local dynamic photoexcitation the narrow-band optical radiation of a visible band. The possibility of the choice of harmonic or pulse modulation of counting rate of a flare with adjustment of parameters of modulation is provided in the installation. The electronic-mechanical and optical systems of positioning operated by the microcontroller provide a flare of the heterostructures with quantum walls local area with a minimum diameter of spot of 30 microns and accuracy of positioning ±10 microns. The data acquisition module LA-N1USB transforms a photoresponse signal to a digital signal and transfers it to the computer for processing. Results of approbation of a method and installation on InGaN/GaN light-emitting diodes in the static mode confirm existence of inhomogeneities in distribution of a photoelectric on a light-emitting diode crystal surface. The developed method and installation can be used for diagnostics of quality of both light-emitting heterostructures with quantum walls, and other classes of semiconductor devices with p-n transitions: transistors, solar elements, photo diodes, etc.

Light-emitting heterostructures, quality diagnostics, automated installation, lateral heterogeneity, local photoexcitement, photoelectric response.

2017_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Vitalii Ivanovich Smirnov, Ulyanovsk State Technical University, Doctor of Engineering, Professor; graduated from Gorky State University with the specialty of Physics; Professor of the Department of Design and Technology of Electronic Instrumentation at Ulyanovsk State Technical University; an author of articles, monographs, inventions in the field of automation instrument measurement. [e-mail: smirnov-vi@mail.ru]V. Smirnov,

Andrei Anatolievich Gavrikov, Ulyanovsk State Technical University, Candidate of Engineering; graduated from Ulyanovsk State Technical University with the specialty of Design and Technology of Electronic Instrumentation, Senior Staff Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: a.gavrikoff@gmail.com]A. Gavrikov,

Anton Mikhailovich Shorin, Ulyanovsk State Technical University, Postgraduate Student at the Department of Design and Technology of Electronic Instrumentation; graduated from Ulyanovsk State Technical University with the specialty of Design and Technology of Electronic Instrumentation; an engineer at the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences; an author of articles in the field of measurement of thermal and physical parameters of semiconductor devices. [e-mail: anshant@yandex.ru]A. Shorin

The Method for Measuring Thermal Resistance Components of Semiconductor Devices and Its Practical Implementation 000_13.pdf

The modulation method for measuring components of thermal impedance of semiconductor devices is considered. The method implies device stimulation with heating power varying harmonically. In interpulse time, the heat-sensitive parameter, forward voltage drop on the p-n junction, at low measuring current is determined. First harmonic of the p-n junction temperature is determined by the discrete Fourier transform, which allows to determine thermal impedance module and a phase at modulation frequency of heating power. Numerical simulation shows that the components of thermal resistance of a device according to the Foster network can be determined at the modulation frequencies corresponding to the minima of the first derivative of the frequency dependence of the real part of thermal impedance. A distinctive feature of the method is the fact that the temperature trend of the case does not significantly affect the result of the measurement. The main characteristics of the device realizing the described method are given.

Thermal impedance, semiconductor devices, modulation of heating power, thermal resistance components.

2017_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Sergei Feofentovich Tiurin, Perm National Research Polytechnic University, Honored Inventor of the Russian Federation; Doctor of Engineering; Professor at the Department of Automation and Telemechanics of Perm National Research Polytechnic University; an author of articles, monographs, inventions in the field of fault-tolerant elements and devices of computers and control systems. [e-mail: tyurinsergfeo@yandex.ru]S. Tiurin,

Vladimir Georgievich Zarubskii, Perm Institute of the Federal Penal Service of the Russian Federation, Candidate of Engineering, Associate Professor of regime and security in Penal System Department of Perm Institute of the Federal Penal Service of the Russian Federation; an author of articles, monographs, inventions in the field of fault-tolerant elements and devices of computers and control systems. [e-mail: volen3030@rambler.ru]V. Zarubskii

Functional Complete Tolerant Logical Components Parryingtwo and Three Failure in Each Transistor Structure 000_14.pdf

Reliability of control systems of various technological processes depends on the reliability of the circuitry constituting the basis for its structure. The article deals with functional complete tolerant look up table - FCTLUT included in the field-programmable gate array (FPGA) for high-reliability applications, with the ability to save original function in case of failure of two or three transistors in each transistor structure. The analysis of the complexity of the proposed FCTLUT2 with nine-fold redundancy parrying the failure of two transistors in each transistor structure and FCTLUT3 with sixteen-fold redundancy parrying the refusal of three transistors in each transistor structure compared with FCTLUT1 parrying the failure of one transistor in each transistor structure. FCTLUT1, 2, and 3 are compared on the probability of failure-free operation with triplication structures of logic elements of the FPGA.

Lut, logical element, fpga, lut, transistor, functional complete tolerant look up table - fctlut, redundancy, probability of no-failure operation, triplication, quadrupling, nine-fold redundancy, sixteen-fold redundancy.

2017_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics, Mathematical modeling.


Sergei Viacheslavovich Vasin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences (RAS), Candidate of Physics and Mathematics; graduated from Physics and Technology Faculty оf Ulyanovsk branch of Moscow State University; Senior Scientist at Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences (RAS); Associate Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fiber optics, methods of inspection of semiconductors and semiconductor devices. [e-mail: s.vasin@outlook.com]S. Vasin,

Oleg Vitalevich Ivanov, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics and at Technological Research Institute of Ulyanovsk State University, Doctor of Physics and Mathematics; graduated from Physics and Technology Faculty оf Ulyanovsk branch of Moscow State University; Scientist at Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics and at Technological Research Institute of Ulyanovsk State University; Professor at the Department of Radioengineering, Opto- and Nanolectronics of Ulyanovsk State Technical University; an author of papers in the field of fiber optics, optics of anisotropic media and thin films. [e-mail: olegivvit@yandex.ru]O. Ivanov

Development of a Control and Interrogation Scheme of a Fiber-optic Bend Sensor Based on Double Cladding Fiber 000_14.pdf

The control and interrogation scheme of the fiber optic bend sensor was developed and implemented. The structure of the sensor is formed by inserting a section of SM630 fiber with double cladding between standard SMF-28 single-mode fibers. The operating principle of the sensor is based on conversion between core and cladding modes. The modes are coupled at the junction of the fibers with different refractive index profiles. Two laser diodes with the wavelengths of 1328 and 1545 nm are used for sensor interrogation. At these two wavelengths, the dependences of fiber transmittance on bending are significantly different. A microcontroller is used to control and collection data from a photodetector. The article shows that the proposed and implemented scheme allows the sensor to measure bends with curvature radii from meters to 26 cm with a measurement error less than 1%.

Optical fiber, cladding modes, fiber optic bend sensor.

2017_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov IRE of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences (RAS); Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE of RAS; an author of monographs, articles, and inventions in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Evgenevich Rezchikov , Ulyanovsk State Technical University, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Postgraduate Student at the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE of RAS; an author of papers in the field of measurement automation and researching noise characteristics of semiconductor devices and integrated circuits. [e-mail: s.rezchikov@ulstu.ru]S. Rezchikov

Optimization of the Procedures of Measuring the Parameters of Low-frequence Noise With 1/f Γ-type Spectrum 000_13.pdf

The short analysis of measurement methods for parameters of low-frequency (LF) noise with 1/fγ-type is considered. The authors show that the total measurement error of the LF-noise power spectral density (PSD) at the specified time of averaging is minimum at a certain (optimum) bandwidth of the filter. Measurement procedures for an exponent γ of PSD frequency dependence minimizing a total measurement error γ by results of measurement of PSD noise at two frequencies at series and parallel filtration are offered. The optimization essence at a series filtration comes down to optimum distribution of the specified total time of measurement at the specified relation of frequencies between measurements at the first and second frequency, and at a parallel filtration -to definition of the optimum relation of frequencies for PSD noise measurement at the specified total time of measurement. Methodical measurement error estimates for γare given at implementation of various measurement procedures depending on the γvalue.

Low-frequency noise, power spectral density, parameters, measurement, error, optimum procedures.

2016_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.


Azat Maratovich Nizametdinov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences, Postgraduate Student at Ulyanovsk State Technical University; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Signor Staff Scientist at Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences; an author of articles, inventions in the field of information and measuring systems and measurement automation. [e-mail: anizametdinov@yandex.ru]A. Nizametdinov

The Analysis of Vibroviscosity Sensor Functionality in the Mode of Tuning the Frequency of the Forced Oscillations 000_14.pdf

The analysis of the vibroviscosity sensor work in the proposed mode of forced oscillations with maintaining the specified value of the phase difference between the excitation signal and the response signal by tuning the frequency of the excitation signal is carried out. The method for calculating the current value of the Q-factor and the natural frequency with the use of the results of measuring the amplitude of forced oscillations and the phase difference between the excitation and output signals of the oscillatory system is considered. The author made the analysis of the system performance in the mode with discrete frequency tuning and error estimation of the oscillatory system parameters with the generator frequency that is not equal to the natural frequency of the oscillatory system. Some recommendations concerning the rational choice of the step changes of the output generator signal frequency are provided.

Oscillating system, forced oscillations, q-factor, natural frequency, vibroviscosity sensor, phase difference.

2016_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.


Ilia Vladimirovich Frolov, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, andidate of Engineering; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of methods and means of nondestructive inspection for semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov,

Oleg Aleksandrovich Radaev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Senior Scientist at the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Postgraduate Student at Ulyanovsk State Technical University; an author of papers in the field of development of semiconductor devices automated measurement tools. [e-mail: oleg.radaev.91@mail.ru]O. Radaev,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Director of the Ulyanovsk Branch of the Kotel’nikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of papers in the field of the modeling and researching semiconductor devices and integrated circuits parameters. [e-mail: sva@ulstu.ru]V. Sergeev

Automation of Measurement Processes of Semiconductor Devices Electrical Characteristics With the Use of Psoc 000_13.pdf

The possibilities and features of automation of measurement processes of the semiconductor devices electrical characteristics with the use of a programmable system-on-chip psoc 4 produced by cypress are considered. The authors discuss the general requirements to the hardware of modern measurers of semiconductor devices characteristics. The block diagram of the automated measurer of capacitance-voltage characteristics of semiconductor diodes implementing the frequency method of capacitance measurement is presented. The measuring block performs the functions of data exchange with the computer, setting block for the mode of the controlled object, measuring oscillation frequency of Lc oscillator and measurement information processing. The block is implemented on a programmable system-on-chip psoc 4 produced by cypress.

Measurement automation, semiconductor device, capacitance-voltage characteristics, programmable system-on chip.

2016_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Mikhail Seregeevich Ermakov, Ulyanovsk State University, Candidate of Physics and Mathematics; graduated from the Faculty of Physics and High Technology Engineering of Ulyanovsk State University; Engineer at Federal Research and Production Center Joint Stock Company ‘Researchand-Production Association ‘Mars’; specializes in the field of building and developing automated measuring systems; an author of articles and papers in the field of semiconductor devices analysis. [e-mail: ermakov@pisem.net]M. Ermakov

The Development of the Algorithm for Calibration and Temperaturehumidity Compensation of the Gas Sensor Readout on the Basis of the Stannic Oxide 000_14.pdf

The distinctive features of sensors on the basis the stannic oxide are high sensitivity, simple structure and the relatively low price. The main disadvantage of the sensors is the poor selectivity. Within the research, the gas sensor on the basis of the stannic oxide as a typical representative of the adsorption type sensors is chosen. The article discusses the calibration and improvement in the accuracy of gas sensors on the basis of the stannic oxide that are widely used in systems designated for the gaseous atmosphere composition control. The algorithms for calibration and temperature-humidity compensation of the gas sensor readout are developed. The algorithms allow to calibrate these sensors without using the complex equipment as well as to correct their readout depending on the temperature and humidity of the environment. The developed algorithms increase the readout accuracy of the sensor on the basis the stannic oxide. The proposed solutions are based on well-known approaches to sensor calibration and correction. The solutions also concretize the results relating to the MQ-13type of sensor.

Gas sensor, stannic oxide, calibration, temperature-humidity compensation.

2016_ 3

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics, Information systems.


Vladimir Nikolaevich Kliachkin, Ulyanovsk State Technical University, Doctor of Engineering; graduated from the Mechanical Faculty of Ulyanovsk Polytechnic Institute; Professor at the Department of Applied Mathematics and Informatics of Ulyanovsk Polytechnic University; an author of scientific works in the field of reliability and statistical methods. [e-mail: v_kl@mail.ru]V. Kliachkin,

Irina Nikolaevna Karpunina, Ulyanovsk Institute of Civil Aviation named after Chief Marshal of Aviation B.P. Bugaev, Candidate of Engineering, Associate Professor; graduated from Moscow Aviation Institute; Associate Professor at the Department of General Professional Disciplines at Ulyanovsk Institute of Civil Aviation named after Chief Marshal of Aviation B.P. Bugaev; interested in dynamics and strength of machines, reliability. [e-mail: karpunina53@yandex.ru]I. Karpunina,

Mariia Konstantinovna Fedorova, Ulyanovsk State Technical University, graduated from the Faculty of Information Systems and Technologies of Ulyanovsk State Technical University; interested in computer-aided technologies of statistical data analysis. [e-mail: mashulka3031_94@mail.ru]M. Fedorova

Evaluation of the Computer Temperature Regime Stability 000_7.pdf

The temperature regime significantly affects the durability of the computer. Ensuring stability of the computer functioning considers the stability of the heating temperature of the main elements that should not exceed the specified values. The article discusses issues related to the timely warning about a possible violation of the temperature regime stability. In order to diagnose stability, the multivariate statistical control methods are proposed to use. Evaluation of stability is carried out with the use of two criteria: stability of the temperature average level and their dispersion. Independent parameters can be controlled with the use of standard shewhart charts. The algorithms on the basis of Hotelling statistics (for assessing stability of the middle-level temperature measurement process) and generalized variance (for evaluation of the dispersion process stability) are used for correlated parameters. The efficiency of these algorithms can be enhanced through the analysis of non-random structures on the control charts, the use of the warning border, as well as application of modifications based on the cumulative amounts or moving averages weighted exponentially. The multivariate statistical technique of the computer temperature regime control including monitoring in the context of a well-developed process for a training sample in order to separate the parameters controlled for a group of independent and correlated ones, process analysis for assessment of control characteristics and continuous monitoring of the process with the construction of Hotelling charts and generalized dispersion with identifying possible violations of the process based on the presence of significant structures and the use of a warning border. This technique is illustrated by the example of five computer temperature regime parameters control.

Stability, temperature, hotelling algorithm, warning limit, generalized variance, control chart.

2016_ 3

Sections: Mathematical modeling

Subjects: Mathematical modeling, Automated control systems, Electrical engineering and electronics.


Aleksandr Grigorevich Tashlinskii, Ulyanovsk State Technical University, Doctor of Engineering, Professor; graduated from the Faculty of Radioengineering of Ulyanovsk Polytechnic Institute; Head of the Department of Radioengineering at Ulyanovsk State Technical University; an author of articles, monographs, and inventions in the field of digital signal and image processing. [e-mail: tag@ulstu.ru]A. Tashlinskii,

Mikhail Grigorevich Tsarev, Ulyanovsk State Technical University, Postgraduate Student at Ulyanovsk State Technical University; graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; an author of articles in the field of digital signal and image processing. [e-mail: michael.tsaryov@gmail.com]M. Tsarev

Pseudogradient Time Shift Estimation of Radio Pulses Received By Spatially Distributed Sensors Using Fpld 000_13.pdf

The authors carried out the analysis of computational complexity and performance of recurrent algorithms for estimation of the difference in arrival times of radio pulses received by spatially distributed sensors such as antenna array elements in case of their realization on field programmable logic devices (FLPD). The algorithms are synthesized on the basis of non-identification pseudogradient adaptation; they do not require any prior assessment of the signal parameters. The algorithms are stable to impulse interference and used under conditions of prior uncertainty. The problem of measuring the time shift is considered as the problem of estimating the parameter of alignment of signals received by different receivers and digitized. The specificity of the algorithms implementation in VHDL in case of concerning mean square frame-to-frame difference as a target function is considered. An implementation of one of the algorithm operations (linear interpolation of discrete signal) on FPLD is shown as an example. The algorithm, the block diagram, the module diagram, and the comparative analysis of the achievable frequency for different types of FPLD are presented in the article.

Digital signal, radiolocation, spatially distributed sensors, time shift, pseudogradient estimation, target function, fpld.

2016_ 2

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics, Automated control systems, Architecture of ship's system.


Gennadii Nikolaevich Abramov, Togliatti State University, Doctor of Engineering, Professor at the Department of Industrial Electronics at Togliatti State University; Honored Worker of Higher Professional Education of the Russian Federation; an author of articles and patents in the field of analog-to-digital and digital-to-analog conversion of monopulse electrical signals (MIES). [e-mail: yuran_a@mail.ru]G. Abramov,

Iurii Gennadievich Abramov, Labyrinth Volga, LLC, got the Master’s Degree in Engineering and Technology with specialty in Electronic Devices and Equipment; graduated from Togliatti State University; a system administrator at Labyrinth Volga, LLC; an author of scientific publications and patents in the field of analog-to-digital conversion of MIES parameters. [e-mail: yuran_a@mail.ru]I. Abramov

Improving Quality of Time Parameters of Vernier-pulse Time-digital Converters 000_13.pdf

Vernier - pulse time-digital converters (TDC) are used for the conversion of time intervals into the code subnanosecond resolution in many areas of science and technology. Disadvantages include low speed and large dead time of conversion, which are defined directly by the vernier - pulse method behind the basis of their work and the need of the total digital conversion result calculation. Therefore, improving the performance and reducing the dead time of vernier - pulse TDC while maintaining their resolution that can significantly extend the possibility of using TDC data in the problems of time intervals transformation become urgent tasks. The article deals with a method for improving twice the time parameters (decrease in conversion time and, accordingly, the conversion dead time) of vernier-pulse TDC by increasing the period following the pulse-counting sequence of the discrete transformation. Replacing the process of calculating the overall digital result of the conversion in the arithmetic logic unit (ALU) to the logical operation of summation result of the digital conversion with twice the value of the digital result just provides a further reduction of the additional value of the dead time conversion. However, the exclusion of the ALU from the conversion process reduces the additional hardware expenses of vernier-pulse TDC and simplifies the process of determining the conversion result. The possibility of determining the overall digital result of the conversion in the same way and in the vernier-pulse TDC executed without increasing the period of starting pulse-counting sequence at the discrete transformation is shown. The method suggested is recommended for halving the time of transformation and reducing the dead time vernier-pulse TDC double interpolation more than twice, for example, in the universal time slot counter NR5370L manufactured by Hewlett Packard.

Shock generator excitation recycle generator, transformation discretization, time-digital converter, time interval, starting pulse, stopping pulse, pulse-counting sequence.

2016_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of Kotel’nikov IRE of the Russian Academy of Sciences; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Iaroslav Gennadievich Tetenkin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring their thermal characteristics. [e-mail: ufire@mv.ru]I. Tetenkin

An Algorithm for Determining the Thermal Parameters of Digital Integrated Circuits for Transient Thermal Characteristics 000_14.pdf

A brief analysis of linear thermal models of semiconductor devices (SD) and algorithms for determining the parameters of the thermal equivalent circuit for transient thermal characteristics (TTC) have been described. The complexity of the implementation of the algorithm for determining the thermal parameters of the SD using the method of structural functions according to the JESD51-14 standard has been mentioned. The original method of measurement of the digital integrated circuits (DIC) TTC using the frequency variation measurement of the DIC ring generator is described. The possibility of implementing of the method using the improved measurement system for the analysis of the DIC thermal parameters is shown. The simple algorithm of calculation of the SD thermal parameters using the zero points of the TTC second derivative is offered. This algorithm for calculating the DIC thermal parameters was tested with the use of CD4011 TTC, which was measured with an improved measurement system. The possibility of the algorithm automation is discussed.

Semiconductor devices, thermal equivalent schemes, thermal parameters, transitional thermal characteristics, digital integrated circuits, measurement, algorithm of calculation.

2016_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Aleksei Robertovich Degtyarev, JSC Ulyanovsk Instrument Manufacturing Design Bureau, Post-graduate Student of Ulyanovsk State Technical University; graduated from the Faculty of Information Systems and Technologies of Ulyanovsk State Technical University; an engineer of JSC Ulyanovsk Instrument Manufacturing Design Bureau; specializes in the field of creation and development of aircraft and land vehicle hardware. [e-mail: alexmind@rambler.ru]A. Degtyarev,

Sergei Konstantinovich Kiselev, Ulyanovsk State Technical University, Doctor of Engineering, Head of Informatization Department at Ulyanovsk State Technical University, Professor at the Department of Measuring and Computing Systems; graduated from Ulyanovsk Polytechnic Institute with a specialty in Aircraft Instruments Engineering; the area of his scientific interests relates to the development of methods, models, algorithms, and equipment for automation of manufacturing, diagnosing, and testing of aircraft instruments, R & D organization; an author of monographs, a large number of papers, and patents in the field of instrumentation. [e-mail: ksk@ulstu.ru]S. Kiselev

Reliability of Integrated Modular Avionics Reconfigurable Complexes 000_3.pdf

This paper briefly outlines the problems of calculations reliability for multiprocessor systems. The authors show disadvantages of the statistical calculations method for reconfigurable onboard equipment complexes. The preliminary system safety assessment procedure for the system developed is described. The helicopter onboard equipment complex, which is capable to function in cruise flight mode and in modes of landing and takeoff, was considered as an example. Respective hardware and functional graph was built. The graph takes into account functions criticality, data streams between them, and specific hardware features. Operating modes of the complex are also described. Evaluation of developed reconfiguration algorithms effectiveness was implemented with the use of Fault Tree Analysis (FTA) for the traditional federative architecture with double reservation and for the integrated modular avionics architecture that consists of a crate with the reserved commutation module. Respective fault trees were built and the numerical results of reliability evaluation were presented. In order to improve algorithms for performing better reliability, some recommendations are given. The authors also show the impossibility of implementing the reconfigurable architecture on the basis of the existing complexes with the dynamically reconstructive architecture. The architecture doesn't meet the requirements of complexes reliability and doesn’t comply with modern standards for airborne equipment development.

Multiprocessor computing system, reconfiguration, reliability, fault tree.

2016_ 1

Sections: Automated control systems

Subjects: Automated control systems, Electrical engineering and electronics, Architecture of ship's system.


Svetlana Aleksandrovna Rozhkova, Ogarev Mordovia State University, graduated from the Faculty of Mathematics and Information Technologies at Ogarev Mordovia State University; Post-graduate Student, Lecturer of the Department of Computer-Aided Design at Ogarev Mordovia State University; an author of articles in the field of mathematical modeling of home energy management systems. [e-mail: rozhkova_sa@mail.ru]S. Rozhkova,

Vladimir Fedorovich Belov, Ogarev Mordovia State University, Doctor of Engineering, Professor; graduated from the Faculty of Electronics at Ogarev Mordovia State University; Head of the Department of Computer-Aided Design at Ogarev Mordovia State University; an author of articles, monographs, and inventions in the field of the design of autonomous electric power systems, in which power quality parameters are controllable. [e-mail: belovvf@mail.ru]V. Belov

Optimal Scheduling of Local Battery Storage 000_4.pdf

Nowadays energetics is characterized by consistent trend of the development of distributed power generation systems (microgrids) and alternative energy sources implementation as its components. In these systems using local electric batteries became actual and possible for automatic energy consumption management. These devices significantly increase the reliability and electronic characteristics of electricity supply through optimal choice of energy sources using rapid connection of the power sources to the power consumers. The authors analyze the algorithm for optimal control of the power system consisting of two energy sources - one of them is battery storage and another one is external centralized grid where time-varying electricity pricing is released. The problem of finding the algorithm for optimal control generation as a task of the creating working timetable of electric storage, which has to minimize expenses for power supply is considered. Within a given time interval, a microprocessor controls a power storage battery releasing process. Particle Swarm Optimization (PSO) is selected as a numerical method for solving this problem. Based on experiment numerical results that were performed, conclusions about effectiveness of developed battery schedule optimization algorithm are given; also recommendations were given for further improvements of microprocessor programming.

Control, microgrid, electric energy consumption, battery energy storage, optimization, non-linear programming, particle swarm optimization.

2016_ 1

Sections: Automated control systems

Subjects: Automated control systems, Electrical engineering and electronics.


Sergei Grigorievich Chernyi, Kerch State Marine Technological University, Candidate of Engineering; graduated from Kherson National Technical University; Associate Professor at the Department of Electrical Equipment for Ships and Process Automation at Kerch State Marine Technological University; an author of articles in the field of expert systems and offshore drilling platforms. [e-mail: sergiiblack@gmail.com]S. Chernyi,

Anton Aleksandrovich Zhilenkov, Kerch State Marine Technological University, Candidate of Engineering; Associate Professor at the Department of Electrical Equipment for Ships and Process Automation at Kerch State Marine Technological University; an author of articles in the field of power systems. [e-mail: zhilenkovanton@gmail.com]A. Zhilenkov

Processes Control Modeling in Complex Systems in Case of Indeterminate Perturbation Actions 000_5.pdf

The article presents the results of developing a computer model of an autonomous electric power station with the main sources of energy with driven dual-fuel engines. Such engines are controlled by microcontroller systems. The model allows to solve a wide range of tasks concerning both management in the autonomous electric power industry and providing of the necessary indicators of power quality in power systems. The main power sources in such systems are the diesel gas generator sets working in parallel. They are sensitive to changes in the shaft loading. The combined models are developed in the Proteus system and Matlab/Simulink. The article addresses the challenge of sustainable of parallel operation of two or more diesel gas generators in autonomous power systems of offshore drilling platforms and facilities of water transport. The authors discuss the conditions of the system operation in the autonomous drilling platform where an abrupt change in the electrical network load makes it impossible to use the diesel gas generators since the latest ones are characterized by a high instability of the speed.

Quality indicators, diesel gas generator, drilling platform, combined models.

2016_ 1

Sections: Automated control systems

Subjects: Automated control systems, Electrical engineering and electronics.


Aleksandr Vladimirovich Ulyanov, Department of GSiIT of "ER-Telecom Holding" Ulyanovsk Branch, Head of the Department of GSiIT of "ER-Telecom Holding" Ulyanovsk Branch; graduated from the Faculty of Radioengineering at Ulyanovsk State Technical University; finished his post-graduate study at the Department of Radioengineering at Ulyanovsk State Technical University; an author of articles in the field of methods and tools for measuring the parameters of elements and devices of micro and optoelectronics, automation of measurement processes. [e-mail: ulyanov_a@bk.ru]A. Ulyanov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics at Lobachevsky State University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS. monographs; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Viktor Nikolaevich Rogov, Ulyanovsk State Technical University, Candidate of Engineering, Professor, Head of the Faculty of RadioEngineering of Ulyanovsk State Technical University; graduated from Ulyanovsk Polytechnic Institute; an author of articles and inventions in the field of parameters measurement of electrical noise, optical signals, colorimetry. [e-mail: rvn@ulstu.ru]V. Rogov

Methods and Means of Operational Control of Narrow-band Optical Radiation Spectrum Parameters 000_14.pdf

A brief analysis of the well-known means of operational control parameters of optical radiation spectrum as well as the application of these means has been submitted. It is shown that the main trend of development of spectral analysis means is to improve their performance. A method for measuring the parameters of a narrow-band spectrum of optical radiation in two photodetectors with predetermined spectral characteristics described by a Gaussian function with different wavelengths at the maximum bandwidth has been described. The possibility of operational determination of both the central wavelength of the emission spectrum and the spectral width with the use of the proposed method has been shown. The proposed method can improve performance of monitoring and control sources of optical radiation. The functional scheme and the main characteristics of the experimental prototype device based on the proposed method have been shown. It is experimentally demonstrated that the possibility of application of the developed embodiment of the device for determining the thermal properties of LEDs based on the emission spectrum shift as a result of self-heating of the LED operating current. The results of the testing methodology for measuring thermal properties of LEDs with the use of several samples of serial devices have been obtained.

Emission spectrum, parameters, measurement, photodetector.

2015_ 4

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of Kotel’nikov IRE; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. e-mail: sva@ulstu.ru. [e-mail: sva@ulstu.ru]V. Sergeev,

Iaroslav Gennadievich Tetenkin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor device and integrated circuit and measuring their thermal characteristics. [e-mail: ufire@mv.ru]I. Tetenkin

Determination of Digital Integrated Circuits Thermal Parameters With the Use of Temperature Dependence of Signal Delay Time 000_12.pdf

This article examines the well-known methods for measuring thermal parameters of digital integrated circuits (DIC). The opportunity to use DIC signal delay time as a temperature-sensitive parameter (TSP) in the process of measuring DIC thermal parameters is also proposed. It allows to overcome some of the current complexities and disadvantages of the well-known methods of measuring DIC thermal parameters with the use of DIC electrical parameters as TSP and to simplify the measurement process automation. The method of measuring DIC thermal parameters on the basis of measuring the frequency of the ring oscillator that consists of DIC inverters in the process of DIC self-heating with electric power consumed is considered in the article. The estimation of measurement accuracy of CMOS DIC thermal resistance component using the current method is also demonstrated. The automated software-hardware complex for researching CMOS DIC indicial thermal parameters that can significantly improve the accuracy of thermal parameters resolution capability is described.

Digital integrated circuits, thermal parameters, measurement, signal delay time, ring oscillator, oscillator frequency, temperature dependence.

2015_ 3

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


© FRPC JSC 'RPA 'Mars', 2009-2018 The web-site runs on Joomla!