ISSN 1991-2927
 

ACP № 3 (65) 2021

Keyword: "measurement"

Artem Igorevich Ponomarev,, graduated from Ulyanovsk State Technical University with a degree in Instrumentation; Postgraduate Student at the Department of Measuring and Computing Systems of UlSTU; his research interests are in the field of designing aerometric equipment. e-mail: artem_lsp@mail.ruA.I. Ponomarev,

Mikhail Iurievich Sorokin, Candidate of Sciences in Engineering; graduated from UlSTU with a degree in Aviation Devices and Measuring-Calculating Complexes; Associate Professor at the Department of Measuring and Computing Systems of UlSTU; his research interests are in the field of aerometric equipment development. e-mail: minich80@mail.ruM.I. Sorokin

Integration of the measured altitude-speed performances in the system64_3.pdf

The air data system used by modern aircrafts is a soft hardware designed to measure, compute, and display the altitude-speed performances as well as other parameters such as air temperature, angles of attack and slip; and to provide to aircrew and consumers (various on-board systems) with this information. The speed and altitude are one of the most important flight parameters of an aircraft. The operating principle of modern on- board equipment for measuring the aircraft movement parameters while in flight is based on an aerometric method. This article deals with a method for increasing the accuracy and the reliability of aerodynamic angle-of-attack measurements.

Measurement, pressure, pressure probe, sensor, air data, angle of attack, aircraft, mathematical model, air data system.

2021_ 2

Sections: Information systems

Subjects: Information systems.



Iaroslav Gennadevich Tetenkin, Candidate of Sciences in Engineering; graduated from the Radioengineering Faculty of Ulyanovsk State Technical University; Leading Engineer of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring their thermal characteristics. e-mail: ufire@mv.ruI.G. Tetenkin

Viacheslav Andreevich Sergeev, Doctor of Sciences in Engineering, Professor; graduated from the Physics Faculty of Gorky State Technical University; Head of the Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at the Ulyanovsk Branch of Kotel’nikov IRE of RAS; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. e-mail: sva@ulstu.ruV.A. Sergeev

The measurement of thermal parameters by changing frequency of embedded ring oscillator63_9.pdf

The article describes a brief analysis of linear thermal models of digital integrated circuits (DIC) and algorithms for determining the parameters of thermal equivalent circuits of DIC-based on transient thermal characteristics (TTC). It distinguishes the difficulties in implementing the algorithm for determining the thermal parameters of the DIC-based on the method of structure functions according to the JESD51-14 document and describes a new method for measuring the FPGA TTC by changing the frequency of a ring oscillator embedded in the FPGA logic elements. It also considers the hardware-software complex used for measuring the thermal parameters of FPGAs and proposes a simple algorithm for calculating the thermal parameters of FPGAs based on the analysis of the FPGA TTC using methods of numerical differentiation. The specified algorithm for calculating thermal parameters has been tested on the example of FPGA TTC EPM240T100C5 and Lattice M4A5-64/32.

Digital integrated circuits, thermal circuit, thermal parameters, transient thermal characteristics, FPGA, measurement, calculating algorithm.

2021_ 1

Sections: Mathematical modeling

Subjects: Mathematical modeling.



Viacheslav Andreevich Sergeev, Doctor of Sciences in Engineering, Professor; graduated from the Faculty of Physics of the Lobachevsky State University of Gorky; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; Head of the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an invention holder and author of monographs, articles in the field of the performance analysis and thermal parameter measurement of semiconductor devices and integrated circuits. e-mail: sva@ulstu.ruV. A. Sergeev

Ruslan Gennadevich Tarasov, graduated from the Ulyanovsk Higher Military Command School of Communications; Director of JSC ‘NPP ‘Zavod Iskra’; an applicant at the Department of Radioengineering, Opto- and Nanoelectronics of Ulyanovsk State Technical University; an author of publications in the field of development of methods and instruments for parameter measurements and quality control of radioelectronic devices. e-mail: rgtarasov@yandex.ruR. G. Tarasov

Quality control of x-band output power amplifier submodules by transient thermal characteristics60_14.pdf

A brief rview of techniques and facilities for detecting hidden defects in electronic modules by thermal diagnostic and measuring methods for characterizing the thermal properties of active devices in electronic modules is presented. It is shown that the assembly quality of modern submodules of X-band output power amplifiers (OPA) with two parallel- connected GaAs monolithic microwave intеgrated circuits can be assessed by the temperature difference of these monolitic integrated circuits during the OPA operation. A Foster-type thermal equivalent circuit with two galvanic-coupled active devices (unpacked semiconductor devices) is examined in order to describe and analyse thermal processes in OPA. A new method for measuring the thermal junction-to-case resistance and thermal junction-to-case time constant of semiconductor devices by transient thermal characteristics at the start of heating process when applying heat power of two different levels to the electronic module is described. The method is distinguished and favoured among others, due to the fact that it is not required to measure power consumed by each semiconductor device; only the total power consumed by the electronic module from the power supply is specified when measuring. The error of this estimation method does not exceed 10 percent. Сonditions and features of the method applied to the OPA submodules are considered.

Submodule of output power amplifier, active devices, electronic module, semiconductor devices, heat power, thermal parameters, measurement, transient thermal characteristics.

2020_ 2

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.



Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of sciences, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of sciences (RAS); Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE; an author of monographs, articles, and inventions in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Evgenevich Rezchikov, Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics of the Russian Academy of sciences, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Postgraduate Student of the Base Department of Radioengineering, Opto and Nanolectronics at the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of articles in the field of measurement automation and noise characteristics research of semiconductor devices and integrated circuits. [e-mail: s.rezchikov@ulstu.ru]S. Rezchikov

The Optimization of Procedures for Measuring the Semiconducter Devices’ Paramters of Low-freqency Noise Influenced By White Noise 52_8.pdf

The brief analysis of techniques for measuring the parameters of low-frequency (LF) noise with 1/f?-type spectrum has been proposed. The estimation of measurement error of power spectral density (PSD) and ?-rays spectrum index are given by taking into account the influence of white-noise level. Based on the results of noise spectral power density measurements implemented at three frequencies when series and parallel filtering, authors propose procedures of measuring the index of ?-rays spectrum that minimize a total inaccuracy of ? value determination. The essence of optimization in case of serial filtering reduces to the optimum distribution of preset overall measurement time between measurements at the first, second and additional frequencies in case of the given frequency ratio, and when parallel filtering, to the determination of the optimum frequency ratio of measuring the noise PSD in case of the preset overall measurement time. A systematic measurement error of ? value has been estimated while implementing of various measurement procedures depending on ? value. The estimations are presented in the article. It is shown that the optimization of measuring procedures allows to reduce an error of the ? value determination by 1.5 to 2 times.

Low-frequency noise, power spectral density, index of spectrum form, measurement, error, optimum procedures.

2018_ 2

Sections: Mathematical modeling

Subjects: Mathematical modeling.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of the Kotel’nikov IRE of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of the Kotel’nikov Institute of Radioengineering and Electronics (IRE) of the Russian Academy of Sciences (RAS); Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE of RAS; an author of monographs, articles, and inventions in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Sergei Evgenevich Rezchikov , Ulyanovsk State Technical University, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Postgraduate Student at the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of the Kotel’nikov IRE of RAS; an author of papers in the field of measurement automation and researching noise characteristics of semiconductor devices and integrated circuits. [e-mail: s.rezchikov@ulstu.ru]S. Rezchikov

Optimization of the Procedures of Measuring the Parameters of Low-frequence Noise With 1/f Γ-type Spectrum 000_13.pdf

The short analysis of measurement methods for parameters of low-frequency (LF) noise with 1/fγ-type is considered. The authors show that the total measurement error of the LF-noise power spectral density (PSD) at the specified time of averaging is minimum at a certain (optimum) bandwidth of the filter. Measurement procedures for an exponent γ of PSD frequency dependence minimizing a total measurement error γ by results of measurement of PSD noise at two frequencies at series and parallel filtration are offered. The optimization essence at a series filtration comes down to optimum distribution of the specified total time of measurement at the specified relation of frequencies between measurements at the first and second frequency, and at a parallel filtration -to definition of the optimum relation of frequencies for PSD noise measurement at the specified total time of measurement. Methodical measurement error estimates for γare given at implementation of various measurement procedures depending on the γvalue.

Low-frequency noise, power spectral density, parameters, measurement, error, optimum procedures.

2016_ 4

Sections: Electrical engineering and electronics

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics of Gorky State Technical University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; Head of the Department of Radioengineering, Opto and Nanolectronics of Ulyanovsk State Technical University at Ulyanovsk Branch of Kotel’nikov IRE of the Russian Academy of Sciences; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor devices and integrated circuits performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Iaroslav Gennadievich Tetenkin, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, graduated from the Faculty of Radioengineering of Ulyanovsk State Technical University; Lead Engineer of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS; an author of scientific publications and inventions in the field of computer-aided measurement and parameter analysis of semiconductor devices and integrated circuits and measuring their thermal characteristics. [e-mail: ufire@mv.ru]I. Tetenkin

An Algorithm for Determining the Thermal Parameters of Digital Integrated Circuits for Transient Thermal Characteristics 000_14.pdf

A brief analysis of linear thermal models of semiconductor devices (SD) and algorithms for determining the parameters of the thermal equivalent circuit for transient thermal characteristics (TTC) have been described. The complexity of the implementation of the algorithm for determining the thermal parameters of the SD using the method of structural functions according to the JESD51-14 standard has been mentioned. The original method of measurement of the digital integrated circuits (DIC) TTC using the frequency variation measurement of the DIC ring generator is described. The possibility of implementing of the method using the improved measurement system for the analysis of the DIC thermal parameters is shown. The simple algorithm of calculation of the SD thermal parameters using the zero points of the TTC second derivative is offered. This algorithm for calculating the DIC thermal parameters was tested with the use of CD4011 TTC, which was measured with an improved measurement system. The possibility of the algorithm automation is discussed.

Semiconductor devices, thermal equivalent schemes, thermal parameters, transitional thermal characteristics, digital integrated circuits, measurement, algorithm of calculation.

2016_ 1

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Aleksandr Vladimirovich Ulyanov, Department of GSiIT of "ER-Telecom Holding" Ulyanovsk Branch, Head of the Department of GSiIT of "ER-Telecom Holding" Ulyanovsk Branch; graduated from the Faculty of Radioengineering at Ulyanovsk State Technical University; finished his post-graduate study at the Department of Radioengineering at Ulyanovsk State Technical University; an author of articles in the field of methods and tools for measuring the parameters of elements and devices of micro and optoelectronics, automation of measurement processes. [e-mail: ulyanov_a@bk.ru]A. Ulyanov,

Viacheslav Andreevich Sergeev, Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS, Doctor of Engineering, Associate Professor; graduated from the Faculty of Physics at Lobachevsky State University; Head of Ulyanovsk Branch of Kotel’nikov Institute of Radioengineering and Electronics (IRE) of RAS. monographs; an author of monographs, inventions, and articles in the field of researching and simulating semiconductor device and integrated circuit performance, and measuring their thermal characteristics. [e-mail: sva@ulstu.ru]V. Sergeev,

Viktor Nikolaevich Rogov, Ulyanovsk State Technical University, Candidate of Engineering, Professor, Head of the Faculty of RadioEngineering of Ulyanovsk State Technical University; graduated from Ulyanovsk Polytechnic Institute; an author of articles and inventions in the field of parameters measurement of electrical noise, optical signals, colorimetry. [e-mail: rvn@ulstu.ru]V. Rogov

Methods and Means of Operational Control of Narrow-band Optical Radiation Spectrum Parameters 000_14.pdf

A brief analysis of the well-known means of operational control parameters of optical radiation spectrum as well as the application of these means has been submitted. It is shown that the main trend of development of spectral analysis means is to improve their performance. A method for measuring the parameters of a narrow-band spectrum of optical radiation in two photodetectors with predetermined spectral characteristics described by a Gaussian function with different wavelengths at the maximum bandwidth has been described. The possibility of operational determination of both the central wavelength of the emission spectrum and the spectral width with the use of the proposed method has been shown. The proposed method can improve performance of monitoring and control sources of optical radiation. The functional scheme and the main characteristics of the experimental prototype device based on the proposed method have been shown. It is experimentally demonstrated that the possibility of application of the developed embodiment of the device for determining the thermal properties of LEDs based on the emission spectrum shift as a result of self-heating of the LED operating current. The results of the testing methodology for measuring thermal properties of LEDs with the use of several samples of serial devices have been obtained.

Emission spectrum, parameters, measurement, photodetector.

2015_ 4

Sections: Electronic and electrical engineering

Subjects: Electrical engineering and electronics.


Viacheslav Andreevich Sergeevsergeev, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, Doctor or Engineering, Associate Professor, graduated from the Faculty of Physics at the Gorkov State University; Director of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; an author of articles and inventions in the field of modeling and research of characteristics of semiconductor devices and integrated circuits [e-mail: sva@ulstu.ru]V. Sergeev,

Ilya Vladimirovich Frolov, Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences, a research officer of the Ulyanovsk Branch of the Kotelnikov Institute of Radio-Engineering and Electronics of the Russian Academy of Sciences; graduated from the Faculty of Radio-Engineering at Ulyanovsk State Technical University; an author of articles in the field of methods and facilities of the nondestructive testing of semiconductor devices. [e-mail: ilya-frolov88@mail.ru]I. Frolov

An Algorithm to Determine a Set of Optimal Frequencies for the Test Signal When Measuring Parameters of Multielement Two-terminals 35_4.pdf

An algorithm for determining the optimal test signal frequency set, minimizing the sum of methodical errors indirect measurement of parameters of multi-element two-terminal by impedance spectroscopy method is proposed. The essence of the algorithm is repeated computer simulation of the measurement of the impedance modulus and phase of the two-pole considering additive random errors and calculation errors in determining the parameters of the two- terminal to the relevant functional dependencies on a given set of frequencies. The accuracy of the algorithm is confirmed by the example of the two-element two-terminal in the form of a parallel RC-circuit. It is shown that the results of computer simulations practically coincide with the results of the analytical calculation. An example of determining the optimal test signal frequency set when measuring the three-element two-terminal with a structure similar to small-signal equivalent circuit of a semiconductor diode. As optimization criterion adopted condition of minimum sum of relative errors in the determination of all parameters of multielement two-terminal, but the proposed algorithm works with the other criteria.

Multielement two-terminal, parameters, measurement, impedance spectroscopy, error, algorithm, optimal frequencies.

2014_ 1

Sections: Mathematical modeling

Subjects: Mathematical modeling, Electrical engineering and electronics.


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